Recent Progress of High-Temperature Superconductor Josephson Junction Technology for Digital Circuit Applications
Summary :
Recent progress of high-temperature superconductor Josephson junction technology is reviewed in the light of the future application to digital circuits. Among various types of Josephson junctions so far developed, ramp-edge-type junctions with a barrier layer composed of oxide materials in the vicinity of metal-insulator transition seem to offer a unique opportunity to fulfill all the requirements for digital circuit applications by virtue of their small junction dimensions, overdamped properties and relatively high IcRn product values at the temperature of around 30-40 K. Recently developed interface engineered junctions can be classified as junctions of this type. These junctions also raise an interesting problem in physics concerning the possibility of resonant tunneling of Cooper pairs via localized states in the barrier. From the viewpoint of practical applications, the improvement of the spread of the junction parameters is still a serious challenge to the present fabrication technology. Although interface engineered junctions seem to be most promising in this regard at present, 1σ spread of around 8% in the present fabrication technology is far from satisfactory for the fabrication of large-scale integrated circuits. The detailed understanding of the barrier formation mechanism in the interface engineered junction is indispensable not only for advancing this particular fabrication technology but also for improving other junction technology utilizing ramp-edge structures.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.1 pp.49-59
- Publication Date
- 2000/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Superconductive Devices and Systems)
- Category
- Digital Applications
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Jiro YOSHIDA, "Recent Progress of High-Temperature Superconductor Josephson Junction Technology for Digital Circuit Applications" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 1, pp. 49-59, January 2000, doi: .
Abstract: Recent progress of high-temperature superconductor Josephson junction technology is reviewed in the light of the future application to digital circuits. Among various types of Josephson junctions so far developed, ramp-edge-type junctions with a barrier layer composed of oxide materials in the vicinity of metal-insulator transition seem to offer a unique opportunity to fulfill all the requirements for digital circuit applications by virtue of their small junction dimensions, overdamped properties and relatively high IcRn product values at the temperature of around 30-40 K. Recently developed interface engineered junctions can be classified as junctions of this type. These junctions also raise an interesting problem in physics concerning the possibility of resonant tunneling of Cooper pairs via localized states in the barrier. From the viewpoint of practical applications, the improvement of the spread of the junction parameters is still a serious challenge to the present fabrication technology. Although interface engineered junctions seem to be most promising in this regard at present, 1σ spread of around 8% in the present fabrication technology is far from satisfactory for the fabrication of large-scale integrated circuits. The detailed understanding of the barrier formation mechanism in the interface engineered junction is indispensable not only for advancing this particular fabrication technology but also for improving other junction technology utilizing ramp-edge structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_1_49/_p
Copy
@ARTICLE{e83-c_1_49,
author={Jiro YOSHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Recent Progress of High-Temperature Superconductor Josephson Junction Technology for Digital Circuit Applications},
year={2000},
volume={E83-C},
number={1},
pages={49-59},
abstract={Recent progress of high-temperature superconductor Josephson junction technology is reviewed in the light of the future application to digital circuits. Among various types of Josephson junctions so far developed, ramp-edge-type junctions with a barrier layer composed of oxide materials in the vicinity of metal-insulator transition seem to offer a unique opportunity to fulfill all the requirements for digital circuit applications by virtue of their small junction dimensions, overdamped properties and relatively high IcRn product values at the temperature of around 30-40 K. Recently developed interface engineered junctions can be classified as junctions of this type. These junctions also raise an interesting problem in physics concerning the possibility of resonant tunneling of Cooper pairs via localized states in the barrier. From the viewpoint of practical applications, the improvement of the spread of the junction parameters is still a serious challenge to the present fabrication technology. Although interface engineered junctions seem to be most promising in this regard at present, 1σ spread of around 8% in the present fabrication technology is far from satisfactory for the fabrication of large-scale integrated circuits. The detailed understanding of the barrier formation mechanism in the interface engineered junction is indispensable not only for advancing this particular fabrication technology but also for improving other junction technology utilizing ramp-edge structures.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Recent Progress of High-Temperature Superconductor Josephson Junction Technology for Digital Circuit Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 49
EP - 59
AU - Jiro YOSHIDA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2000
AB - Recent progress of high-temperature superconductor Josephson junction technology is reviewed in the light of the future application to digital circuits. Among various types of Josephson junctions so far developed, ramp-edge-type junctions with a barrier layer composed of oxide materials in the vicinity of metal-insulator transition seem to offer a unique opportunity to fulfill all the requirements for digital circuit applications by virtue of their small junction dimensions, overdamped properties and relatively high IcRn product values at the temperature of around 30-40 K. Recently developed interface engineered junctions can be classified as junctions of this type. These junctions also raise an interesting problem in physics concerning the possibility of resonant tunneling of Cooper pairs via localized states in the barrier. From the viewpoint of practical applications, the improvement of the spread of the junction parameters is still a serious challenge to the present fabrication technology. Although interface engineered junctions seem to be most promising in this regard at present, 1σ spread of around 8% in the present fabrication technology is far from satisfactory for the fabrication of large-scale integrated circuits. The detailed understanding of the barrier formation mechanism in the interface engineered junction is indispensable not only for advancing this particular fabrication technology but also for improving other junction technology utilizing ramp-edge structures.
ER -
English
