II-VI laser diode was fabricated using a ZnCdSe/ZnS0.06Se0.94/ZnMgSSe SCH structure on GaAs, in which ZnMgSSe was originally proposed by our group. ZnMgSSe is lattice-matched to GaAs and the bandgap energy of ZnMgSSe is larger than that of ZnSe and ZnS0.06Se0.94 lattice-matched to GaAs. As for the crystal growth mechanism, the composition of ZnMgSSe is not changed and the RHEED pattern becomes spotty in group II-rich growth conditions and S incorporation is difficult in group VI-rich growth conditions. From these results, we consider that the optimized growth condition of ZnMgSSe is in the stoichiometric region (both (2
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Hiroyuki OKUYAMA, "Review of II-VI Green Laser Diodes" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 536-545, April 2000, doi: .
Abstract: II-VI laser diode was fabricated using a ZnCdSe/ZnS0.06Se0.94/ZnMgSSe SCH structure on GaAs, in which ZnMgSSe was originally proposed by our group. ZnMgSSe is lattice-matched to GaAs and the bandgap energy of ZnMgSSe is larger than that of ZnSe and ZnS0.06Se0.94 lattice-matched to GaAs. As for the crystal growth mechanism, the composition of ZnMgSSe is not changed and the RHEED pattern becomes spotty in group II-rich growth conditions and S incorporation is difficult in group VI-rich growth conditions. From these results, we consider that the optimized growth condition of ZnMgSSe is in the stoichiometric region (both (2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_536/_p
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@ARTICLE{e83-c_4_536,
author={Hiroyuki OKUYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Review of II-VI Green Laser Diodes},
year={2000},
volume={E83-C},
number={4},
pages={536-545},
abstract={II-VI laser diode was fabricated using a ZnCdSe/ZnS0.06Se0.94/ZnMgSSe SCH structure on GaAs, in which ZnMgSSe was originally proposed by our group. ZnMgSSe is lattice-matched to GaAs and the bandgap energy of ZnMgSSe is larger than that of ZnSe and ZnS0.06Se0.94 lattice-matched to GaAs. As for the crystal growth mechanism, the composition of ZnMgSSe is not changed and the RHEED pattern becomes spotty in group II-rich growth conditions and S incorporation is difficult in group VI-rich growth conditions. From these results, we consider that the optimized growth condition of ZnMgSSe is in the stoichiometric region (both (2
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Review of II-VI Green Laser Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 536
EP - 545
AU - Hiroyuki OKUYAMA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - II-VI laser diode was fabricated using a ZnCdSe/ZnS0.06Se0.94/ZnMgSSe SCH structure on GaAs, in which ZnMgSSe was originally proposed by our group. ZnMgSSe is lattice-matched to GaAs and the bandgap energy of ZnMgSSe is larger than that of ZnSe and ZnS0.06Se0.94 lattice-matched to GaAs. As for the crystal growth mechanism, the composition of ZnMgSSe is not changed and the RHEED pattern becomes spotty in group II-rich growth conditions and S incorporation is difficult in group VI-rich growth conditions. From these results, we consider that the optimized growth condition of ZnMgSSe is in the stoichiometric region (both (2
ER -