Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates

Akito KURAMATA; Shin-ichi KUBOTA; Reiko SOEJIMA; Kay DOMEN; Kazuhiko HORINO; Peter HACKE; Toshiyuki TANAHASHI

Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates

Akito KURAMATA, Shin-ichi KUBOTA, Reiko SOEJIMA, Kay DOMEN, Kazuhiko HORINO, Peter HACKE, Toshiyuki TANAHASHI

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We introduce the characteristics for continuous wave operation at room temperature of InGaN laser diodes fabricated on SiC substrates. The threshold current was 60 mA, the threshold voltage was 8.3 V, and the oscillation wavelength was 404.4 nm. The lifetime of the laser diodes with a constant light output of 1 mW at 25 was 57 hours. The heat dissipation of the devices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p-side-down with an external heat sink, owing to the high thermal conductivity of SiC substrates.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.546-551

Publication Date: 2000/04/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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Akito KURAMATA, Shin-ichi KUBOTA, Reiko SOEJIMA, Kay DOMEN, Kazuhiko HORINO, Peter HACKE, Toshiyuki TANAHASHI, "Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 4, pp. 546-551, April 2000, doi: .
Abstract: We introduce the characteristics for continuous wave operation at room temperature of InGaN laser diodes fabricated on SiC substrates. The threshold current was 60 mA, the threshold voltage was 8.3 V, and the oscillation wavelength was 404.4 nm. The lifetime of the laser diodes with a constant light output of 1 mW at 25 was 57 hours. The heat dissipation of the devices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p-side-down with an external heat sink, owing to the high thermal conductivity of SiC substrates.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_546/_p

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@ARTICLE{e83-c_4_546,
author={Akito KURAMATA, Shin-ichi KUBOTA, Reiko SOEJIMA, Kay DOMEN, Kazuhiko HORINO, Peter HACKE, Toshiyuki TANAHASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates},
year={2000},
volume={E83-C},
number={4},
pages={546-551},
abstract={We introduce the characteristics for continuous wave operation at room temperature of InGaN laser diodes fabricated on SiC substrates. The threshold current was 60 mA, the threshold voltage was 8.3 V, and the oscillation wavelength was 404.4 nm. The lifetime of the laser diodes with a constant light output of 1 mW at 25 was 57 hours. The heat dissipation of the devices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p-side-down with an external heat sink, owing to the high thermal conductivity of SiC substrates.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 546
EP - 551
AU - Akito KURAMATA
AU - Shin-ichi KUBOTA
AU - Reiko SOEJIMA
AU - Kay DOMEN
AU - Kazuhiko HORINO
AU - Peter HACKE
AU - Toshiyuki TANAHASHI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - We introduce the characteristics for continuous wave operation at room temperature of InGaN laser diodes fabricated on SiC substrates. The threshold current was 60 mA, the threshold voltage was 8.3 V, and the oscillation wavelength was 404.4 nm. The lifetime of the laser diodes with a constant light output of 1 mW at 25 was 57 hours. The heat dissipation of the devices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p-side-down with an external heat sink, owing to the high thermal conductivity of SiC substrates.
ER -