Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers
Summary :
Our recent progress in GaN-based nanostructures for quantum dot (QD) lasers and vertical microcavity surface emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4 nm and strong photoluminescence emission from the QDs was observed at room temperature. Furthermore, we found that InGaN QDs could be formed even after 10 QD layers were stacked, thus increasing the total QD density. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. We succeeded in demonstrating in lasing action in vertical cavity surface emitting lasers at room temperature with a cavity finesse of over 200.
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- IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.564-572
- Publication Date
- 2000/04/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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Yasuhiko ARAKAWA, Takao SOMEYA, Koichi TACHIBANA, "Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 564-572, April 2000, doi: .
Abstract: Our recent progress in GaN-based nanostructures for quantum dot (QD) lasers and vertical microcavity surface emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4 nm and strong photoluminescence emission from the QDs was observed at room temperature. Furthermore, we found that InGaN QDs could be formed even after 10 QD layers were stacked, thus increasing the total QD density. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. We succeeded in demonstrating in lasing action in vertical cavity surface emitting lasers at room temperature with a cavity finesse of over 200.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_564/_p
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@ARTICLE{e83-c_4_564,
author={Yasuhiko ARAKAWA, Takao SOMEYA, Koichi TACHIBANA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers},
year={2000},
volume={E83-C},
number={4},
pages={564-572},
abstract={Our recent progress in GaN-based nanostructures for quantum dot (QD) lasers and vertical microcavity surface emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4 nm and strong photoluminescence emission from the QDs was observed at room temperature. Furthermore, we found that InGaN QDs could be formed even after 10 QD layers were stacked, thus increasing the total QD density. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. We succeeded in demonstrating in lasing action in vertical cavity surface emitting lasers at room temperature with a cavity finesse of over 200.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers
T2 - IEICE TRANSACTIONS on Electronics
SP - 564
EP - 572
AU - Yasuhiko ARAKAWA
AU - Takao SOMEYA
AU - Koichi TACHIBANA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Our recent progress in GaN-based nanostructures for quantum dot (QD) lasers and vertical microcavity surface emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4 nm and strong photoluminescence emission from the QDs was observed at room temperature. Furthermore, we found that InGaN QDs could be formed even after 10 QD layers were stacked, thus increasing the total QD density. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. We succeeded in demonstrating in lasing action in vertical cavity surface emitting lasers at room temperature with a cavity finesse of over 200.
ER -
English
