Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy
Summary :
We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV.
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- IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.585-590
- Publication Date
- 2000/04/25
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- Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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Hidenao TANAKA, Atsushi NAKADAIRA, "Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 585-590, April 2000, doi: .
Abstract: We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_585/_p
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@ARTICLE{e83-c_4_585,
author={Hidenao TANAKA, Atsushi NAKADAIRA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy},
year={2000},
volume={E83-C},
number={4},
pages={585-590},
abstract={We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 585
EP - 590
AU - Hidenao TANAKA
AU - Atsushi NAKADAIRA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV.
ER -
English
