Optoelectronic Activities of Dislocations in Gallium Nitride Crystals
Summary :
In order to get a perspective to the future of GaN materials, theoretical and experimental knowledge of the optoelectronic activities of dislocations in hexagonal GaN have been reviewed. Although the dislocations in GaN have been thought to be not quite harmful, a growing number of evidences have been accumulated for the intrinsic noxiousness of the dislocations. There are some inconsistencies between experimental data reported by different groups or at different dates, which can be reconciled by a proposed simple model that takes into account the trapping of free excitons. A transmission electron microscopic study revealed that some type of dislocations exhibit the recombination enhanced dislocation glide effect, suggesting the non-radiative recombination activity of the fresh dislocations. Such intrinsic activities of dislocations in GaN, in both electronical and mechanical respects, will possibly cause great difficulties in optoelectronic devices based on this material when the crystal quality becomes improved.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.612-619
- Publication Date
- 2000/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Yutaka MERA, Koji MAEDA, "Optoelectronic Activities of Dislocations in Gallium Nitride Crystals" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 612-619, April 2000, doi: .
Abstract: In order to get a perspective to the future of GaN materials, theoretical and experimental knowledge of the optoelectronic activities of dislocations in hexagonal GaN have been reviewed. Although the dislocations in GaN have been thought to be not quite harmful, a growing number of evidences have been accumulated for the intrinsic noxiousness of the dislocations. There are some inconsistencies between experimental data reported by different groups or at different dates, which can be reconciled by a proposed simple model that takes into account the trapping of free excitons. A transmission electron microscopic study revealed that some type of dislocations exhibit the recombination enhanced dislocation glide effect, suggesting the non-radiative recombination activity of the fresh dislocations. Such intrinsic activities of dislocations in GaN, in both electronical and mechanical respects, will possibly cause great difficulties in optoelectronic devices based on this material when the crystal quality becomes improved.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_612/_p
Copy
@ARTICLE{e83-c_4_612,
author={Yutaka MERA, Koji MAEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Optoelectronic Activities of Dislocations in Gallium Nitride Crystals},
year={2000},
volume={E83-C},
number={4},
pages={612-619},
abstract={In order to get a perspective to the future of GaN materials, theoretical and experimental knowledge of the optoelectronic activities of dislocations in hexagonal GaN have been reviewed. Although the dislocations in GaN have been thought to be not quite harmful, a growing number of evidences have been accumulated for the intrinsic noxiousness of the dislocations. There are some inconsistencies between experimental data reported by different groups or at different dates, which can be reconciled by a proposed simple model that takes into account the trapping of free excitons. A transmission electron microscopic study revealed that some type of dislocations exhibit the recombination enhanced dislocation glide effect, suggesting the non-radiative recombination activity of the fresh dislocations. Such intrinsic activities of dislocations in GaN, in both electronical and mechanical respects, will possibly cause great difficulties in optoelectronic devices based on this material when the crystal quality becomes improved.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Optoelectronic Activities of Dislocations in Gallium Nitride Crystals
T2 - IEICE TRANSACTIONS on Electronics
SP - 612
EP - 619
AU - Yutaka MERA
AU - Koji MAEDA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - In order to get a perspective to the future of GaN materials, theoretical and experimental knowledge of the optoelectronic activities of dislocations in hexagonal GaN have been reviewed. Although the dislocations in GaN have been thought to be not quite harmful, a growing number of evidences have been accumulated for the intrinsic noxiousness of the dislocations. There are some inconsistencies between experimental data reported by different groups or at different dates, which can be reconciled by a proposed simple model that takes into account the trapping of free excitons. A transmission electron microscopic study revealed that some type of dislocations exhibit the recombination enhanced dislocation glide effect, suggesting the non-radiative recombination activity of the fresh dislocations. Such intrinsic activities of dislocations in GaN, in both electronical and mechanical respects, will possibly cause great difficulties in optoelectronic devices based on this material when the crystal quality becomes improved.
ER -
English
