One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000<cd0216e.gif> on GaAs (111) Substrates

Fumio HASEGAWA; Masato MINAMI; Takashi SUEMASU

One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates

Fumio HASEGAWA, Masato MINAMI , Takashi SUEMASU

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Halide vapor phase epitaxy (HVPE) is the most promising method for obtaining bulk GaN, and a 2 inch free standing wafer has been already obtained by growing on a sapphire substrate and separating by laser irradiation. It is, however, neither very easy nor very productive. Here we propose another more productive way of growing on GaAs substrate, though a free standing GaN is not yet perfectly obtained. It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at as high as 1000 by introducing GaN layer grown at an intermediate temperature such as 850. Surface of the GaN layer grown at 850 was rough but it became smooth surface when GaN was grown on it at 1000, though sometimes there were several hexagonal pits on the surface. The θ-2θ and ω X ray diffraction (XRD) of the grown layer showed only hexagonal GaN(0002).

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.633-638

Publication Date: 2000/04/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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Fumio HASEGAWA, Masato MINAMI , Takashi SUEMASU, "One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 4, pp. 633-638, April 2000, doi: .
Abstract: Halide vapor phase epitaxy (HVPE) is the most promising method for obtaining bulk GaN, and a 2 inch free standing wafer has been already obtained by growing on a sapphire substrate and separating by laser irradiation. It is, however, neither very easy nor very productive. Here we propose another more productive way of growing on GaAs substrate, though a free standing GaN is not yet perfectly obtained. It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at as high as 1000 by introducing GaN layer grown at an intermediate temperature such as 850. Surface of the GaN layer grown at 850 was rough but it became smooth surface when GaN was grown on it at 1000, though sometimes there were several hexagonal pits on the surface. The θ-2θ and ω X ray diffraction (XRD) of the grown layer showed only hexagonal GaN(0002).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_633/_p

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@ARTICLE{e83-c_4_633,
author={Fumio HASEGAWA, Masato MINAMI , Takashi SUEMASU, },
journal={IEICE TRANSACTIONS on Electronics},
title={One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates},
year={2000},
volume={E83-C},
number={4},
pages={633-638},
abstract={Halide vapor phase epitaxy (HVPE) is the most promising method for obtaining bulk GaN, and a 2 inch free standing wafer has been already obtained by growing on a sapphire substrate and separating by laser irradiation. It is, however, neither very easy nor very productive. Here we propose another more productive way of growing on GaAs substrate, though a free standing GaN is not yet perfectly obtained. It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at as high as 1000 by introducing GaN layer grown at an intermediate temperature such as 850. Surface of the GaN layer grown at 850 was rough but it became smooth surface when GaN was grown on it at 1000, though sometimes there were several hexagonal pits on the surface. The θ-2θ and ω X ray diffraction (XRD) of the grown layer showed only hexagonal GaN(0002).},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 633
EP - 638
AU - Fumio HASEGAWA
AU - Masato MINAMI
AU - Takashi SUEMASU
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Halide vapor phase epitaxy (HVPE) is the most promising method for obtaining bulk GaN, and a 2 inch free standing wafer has been already obtained by growing on a sapphire substrate and separating by laser irradiation. It is, however, neither very easy nor very productive. Here we propose another more productive way of growing on GaAs substrate, though a free standing GaN is not yet perfectly obtained. It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at as high as 1000 by introducing GaN layer grown at an intermediate temperature such as 850. Surface of the GaN layer grown at 850 was rough but it became smooth surface when GaN was grown on it at 1000, though sometimes there were several hexagonal pits on the surface. The θ-2θ and ω X ray diffraction (XRD) of the grown layer showed only hexagonal GaN(0002).
ER -