Low Noise K-Band MMIC Receiver Module

Kyung-Wan YU; In-Bok YOM; Man-Seok UHM; Dong-Phil JANG; Jae-Hyun LEE; Seong-Pal LEE

Low Noise K-Band MMIC Receiver Module

Kyung-Wan YU, In-Bok YOM, Man-Seok UHM, Dong-Phil JANG, Jae-Hyun LEE, Seong-Pal LEE

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A 20 GHz-band GaAs MMIC receiver module has been developed using 0.15 µm HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.5 pp.750-754

Publication Date: 2000/05/25

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Type of Manuscript: Special Section PAPER (Special Issue on Recent Developments in Guided-Wave Problems)

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Kyung-Wan YU, In-Bok YOM, Man-Seok UHM, Dong-Phil JANG, Jae-Hyun LEE, Seong-Pal LEE, "Low Noise K-Band MMIC Receiver Module" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 5, pp. 750-754, May 2000, doi: .
Abstract: A 20 GHz-band GaAs MMIC receiver module has been developed using 0.15 µm HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_5_750/_p

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@ARTICLE{e83-c_5_750,
author={Kyung-Wan YU, In-Bok YOM, Man-Seok UHM, Dong-Phil JANG, Jae-Hyun LEE, Seong-Pal LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Noise K-Band MMIC Receiver Module},
year={2000},
volume={E83-C},
number={5},
pages={750-754},
abstract={A 20 GHz-band GaAs MMIC receiver module has been developed using 0.15 µm HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Low Noise K-Band MMIC Receiver Module
T2 - IEICE TRANSACTIONS on Electronics
SP - 750
EP - 754
AU - Kyung-Wan YU
AU - In-Bok YOM
AU - Man-Seok UHM
AU - Dong-Phil JANG
AU - Jae-Hyun LEE
AU - Seong-Pal LEE
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2000
AB - A 20 GHz-band GaAs MMIC receiver module has been developed using 0.15 µm HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.
ER -