60 nm Wavelength Range Polarization-Insensitive 1.55 µm Electroabsorption Modulator Using Tensile-Strained Pre-Biased Multiple Quantum Well
Summary :
We studied theoretically and experimentally an InGaAs/InAlAs/InP polarization-insensitive multiple quantum well (MQW) electroabsorption (EA) modulator operating over a very wide wavelength range in 1.55 µm wavelength region. One of the simplest possible potential-tailored quantum well, "pre-biased" quantum well (PBQW) is used to achieve wide-wavelength polarization insensitivity. PBQW is basically a rectangular quantum well with a thin barrier inserted near one edge of well. This thin barrier effectively introduces "pre-bias" to a rectangular quantum well and the same amount of Stark shift is achieved for electron-heavy hole and electron-light hole transition energies. By incorporating tensile strain into PBQW, polarization-insensitive modulation is achieved over 60 nm wavelength range, from 1510 nm to 1570 nm. This MQW-EA modulator plays an important role in wavelength division multiplexing (WDM) transmission and switching systems.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.6 pp.927-935
- Publication Date
- 2000/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks)
- Category
- Switches and Novel Devices
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Masaki KATO, Yoshiaki NAKANO, "60 nm Wavelength Range Polarization-Insensitive 1.55 µm Electroabsorption Modulator Using Tensile-Strained Pre-Biased Multiple Quantum Well" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 6, pp. 927-935, June 2000, doi: .
Abstract: We studied theoretically and experimentally an InGaAs/InAlAs/InP polarization-insensitive multiple quantum well (MQW) electroabsorption (EA) modulator operating over a very wide wavelength range in 1.55 µm wavelength region. One of the simplest possible potential-tailored quantum well, "pre-biased" quantum well (PBQW) is used to achieve wide-wavelength polarization insensitivity. PBQW is basically a rectangular quantum well with a thin barrier inserted near one edge of well. This thin barrier effectively introduces "pre-bias" to a rectangular quantum well and the same amount of Stark shift is achieved for electron-heavy hole and electron-light hole transition energies. By incorporating tensile strain into PBQW, polarization-insensitive modulation is achieved over 60 nm wavelength range, from 1510 nm to 1570 nm. This MQW-EA modulator plays an important role in wavelength division multiplexing (WDM) transmission and switching systems.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_6_927/_p
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@ARTICLE{e83-c_6_927,
author={Masaki KATO, Yoshiaki NAKANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={60 nm Wavelength Range Polarization-Insensitive 1.55 µm Electroabsorption Modulator Using Tensile-Strained Pre-Biased Multiple Quantum Well},
year={2000},
volume={E83-C},
number={6},
pages={927-935},
abstract={We studied theoretically and experimentally an InGaAs/InAlAs/InP polarization-insensitive multiple quantum well (MQW) electroabsorption (EA) modulator operating over a very wide wavelength range in 1.55 µm wavelength region. One of the simplest possible potential-tailored quantum well, "pre-biased" quantum well (PBQW) is used to achieve wide-wavelength polarization insensitivity. PBQW is basically a rectangular quantum well with a thin barrier inserted near one edge of well. This thin barrier effectively introduces "pre-bias" to a rectangular quantum well and the same amount of Stark shift is achieved for electron-heavy hole and electron-light hole transition energies. By incorporating tensile strain into PBQW, polarization-insensitive modulation is achieved over 60 nm wavelength range, from 1510 nm to 1570 nm. This MQW-EA modulator plays an important role in wavelength division multiplexing (WDM) transmission and switching systems.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - 60 nm Wavelength Range Polarization-Insensitive 1.55 µm Electroabsorption Modulator Using Tensile-Strained Pre-Biased Multiple Quantum Well
T2 - IEICE TRANSACTIONS on Electronics
SP - 927
EP - 935
AU - Masaki KATO
AU - Yoshiaki NAKANO
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2000
AB - We studied theoretically and experimentally an InGaAs/InAlAs/InP polarization-insensitive multiple quantum well (MQW) electroabsorption (EA) modulator operating over a very wide wavelength range in 1.55 µm wavelength region. One of the simplest possible potential-tailored quantum well, "pre-biased" quantum well (PBQW) is used to achieve wide-wavelength polarization insensitivity. PBQW is basically a rectangular quantum well with a thin barrier inserted near one edge of well. This thin barrier effectively introduces "pre-bias" to a rectangular quantum well and the same amount of Stark shift is achieved for electron-heavy hole and electron-light hole transition energies. By incorporating tensile strain into PBQW, polarization-insensitive modulation is achieved over 60 nm wavelength range, from 1510 nm to 1570 nm. This MQW-EA modulator plays an important role in wavelength division multiplexing (WDM) transmission and switching systems.
ER -
English
