Mechanical Fracture of Piezoelectric Single Crystal Chip Resonator due to High Input Power

Noboru WAKATSUKI; Takatoshi OKUDA

Mechanical Fracture of Piezoelectric Single Crystal Chip Resonator due to High Input Power

Noboru WAKATSUKI, Takatoshi OKUDA

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Using LiTaO₃ and LiNbO₃ single crystals, we wish to miniaturize a powerful ultrasonic vibrator. We studied the method of measuring mechanical fractures of resonators with good reproducibility and collected data on mechanical fractures of crystals due to high input electric power. Chip resonators with a 4 MHz and 8 MHz shear mode were selected for the test samples. The driving frequency was swept near the resonance frequency, the duration time was short enough to raise the resonant vibrations and the driving voltage increased in one-volt increments. The method is free from unstable temperature increases. Values of the fracture limit for the driving current were measured and transformed to mechanical vibration velocities. These showed a nearly normal distribution. It was a surprise that concavity in the crater was observed at the center of the 16 MHz LiNbO₃ resonator due to high input power. It was confirmed that the elastic fracture limit was latently very high for LiNbO₃ and LiTaO₃ single crystals.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.9 pp.1422-1426

Publication Date: 2000/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Current Electromechanical Devices and Their Materials with Recent Innovations)

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Noboru WAKATSUKI, Takatoshi OKUDA, "Mechanical Fracture of Piezoelectric Single Crystal Chip Resonator due to High Input Power" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 9, pp. 1422-1426, September 2000, doi: .
Abstract: Using LiTaO₃ and LiNbO₃ single crystals, we wish to miniaturize a powerful ultrasonic vibrator. We studied the method of measuring mechanical fractures of resonators with good reproducibility and collected data on mechanical fractures of crystals due to high input electric power. Chip resonators with a 4 MHz and 8 MHz shear mode were selected for the test samples. The driving frequency was swept near the resonance frequency, the duration time was short enough to raise the resonant vibrations and the driving voltage increased in one-volt increments. The method is free from unstable temperature increases. Values of the fracture limit for the driving current were measured and transformed to mechanical vibration velocities. These showed a nearly normal distribution. It was a surprise that concavity in the crater was observed at the center of the 16 MHz LiNbO₃ resonator due to high input power. It was confirmed that the elastic fracture limit was latently very high for LiNbO₃ and LiTaO₃ single crystals.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_9_1422/_p

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@ARTICLE{e83-c_9_1422,
author={Noboru WAKATSUKI, Takatoshi OKUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Mechanical Fracture of Piezoelectric Single Crystal Chip Resonator due to High Input Power},
year={2000},
volume={E83-C},
number={9},
pages={1422-1426},
abstract={Using LiTaO₃ and LiNbO₃ single crystals, we wish to miniaturize a powerful ultrasonic vibrator. We studied the method of measuring mechanical fractures of resonators with good reproducibility and collected data on mechanical fractures of crystals due to high input electric power. Chip resonators with a 4 MHz and 8 MHz shear mode were selected for the test samples. The driving frequency was swept near the resonance frequency, the duration time was short enough to raise the resonant vibrations and the driving voltage increased in one-volt increments. The method is free from unstable temperature increases. Values of the fracture limit for the driving current were measured and transformed to mechanical vibration velocities. These showed a nearly normal distribution. It was a surprise that concavity in the crater was observed at the center of the 16 MHz LiNbO₃ resonator due to high input power. It was confirmed that the elastic fracture limit was latently very high for LiNbO₃ and LiTaO₃ single crystals.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Mechanical Fracture of Piezoelectric Single Crystal Chip Resonator due to High Input Power
T2 - IEICE TRANSACTIONS on Electronics
SP - 1422
EP - 1426
AU - Noboru WAKATSUKI
AU - Takatoshi OKUDA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2000
AB - Using LiTaO₃ and LiNbO₃ single crystals, we wish to miniaturize a powerful ultrasonic vibrator. We studied the method of measuring mechanical fractures of resonators with good reproducibility and collected data on mechanical fractures of crystals due to high input electric power. Chip resonators with a 4 MHz and 8 MHz shear mode were selected for the test samples. The driving frequency was swept near the resonance frequency, the duration time was short enough to raise the resonant vibrations and the driving voltage increased in one-volt increments. The method is free from unstable temperature increases. Values of the fracture limit for the driving current were measured and transformed to mechanical vibration velocities. These showed a nearly normal distribution. It was a surprise that concavity in the crater was observed at the center of the 16 MHz LiNbO₃ resonator due to high input power. It was confirmed that the elastic fracture limit was latently very high for LiNbO₃ and LiTaO₃ single crystals.
ER -