IEICE TRANSACTIONS on Electronics
Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
Summary :
The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1318-1322
- Publication Date
- 2001/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
- Category
- Hetero-FETs & Their Integrated Circuits
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Takashi MIZUTANI, Makoto YAMAMOTO, Shigeru KISHIMOTO, Koichi MAEZAWA, "Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1318-1322, October 2001, doi: .
Abstract: The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1318/_p
Copy
@ARTICLE{e84-c_10_1318,
author={Takashi MIZUTANI, Makoto YAMAMOTO, Shigeru KISHIMOTO, Koichi MAEZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs},
year={2001},
volume={E84-C},
number={10},
pages={1318-1322},
abstract={The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1318
EP - 1322
AU - Takashi MIZUTANI
AU - Makoto YAMAMOTO
AU - Shigeru KISHIMOTO
AU - Koichi MAEZAWA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
ER -
English
