Low <I>V</I><SUB>be</SUB> GaInAsN Base Heterojunction Bipolar Transistors

Roger E. WELSER; Paul M. DELUCA; Alexander C. WANG; Noren PAN

Low V_be GaInAsN Base Heterojunction Bipolar Transistors

Roger E. WELSER, Paul M. DELUCA, Alexander C. WANG, Noren PAN

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We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50 mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels ( 3 10¹⁹ cm^-3) and dc current gain (β_max up to 100) are achieved in GaInAsN base layer structures ranging in base sheet resistance between 250 and 750 Ω/. The separate effects of a base-emitter conduction band spike and base layer energy-gap on turn-on voltage are ascertained by comparing the collector current characteristics of several different GaAs-based bipolar transistors. Photoluminescence measurements are made on the InGaP/GaInAsN DHBTs to confirm the base layer energy gap, and double crystal x-ray diffraction spectrums are used to assess strain levels in the GaInAsN base layer.

Publication: IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1389-1393

Publication Date: 2001/10/01

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Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))

Category: III-V HBTs

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Roger E. WELSER, Paul M. DELUCA, Alexander C. WANG, Noren PAN, "Low Vbe GaInAsN Base Heterojunction Bipolar Transistors" in IEICE TRANSACTIONS on Electronics, vol. E84-C, no. 10, pp. 1389-1393, October 2001, doi: .
Abstract: We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50 mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels ( 3 10¹⁹ cm^-3) and dc current gain (β_max up to 100) are achieved in GaInAsN base layer structures ranging in base sheet resistance between 250 and 750 Ω/. The separate effects of a base-emitter conduction band spike and base layer energy-gap on turn-on voltage are ascertained by comparing the collector current characteristics of several different GaAs-based bipolar transistors. Photoluminescence measurements are made on the InGaP/GaInAsN DHBTs to confirm the base layer energy gap, and double crystal x-ray diffraction spectrums are used to assess strain levels in the GaInAsN base layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1389/_p

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@ARTICLE{e84-c_10_1389,
author={Roger E. WELSER, Paul M. DELUCA, Alexander C. WANG, Noren PAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Vbe GaInAsN Base Heterojunction Bipolar Transistors},
year={2001},
volume={E84-C},
number={10},
pages={1389-1393},
abstract={We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50 mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels ( 3 10¹⁹ cm^-3) and dc current gain (β_max up to 100) are achieved in GaInAsN base layer structures ranging in base sheet resistance between 250 and 750 Ω/. The separate effects of a base-emitter conduction band spike and base layer energy-gap on turn-on voltage are ascertained by comparing the collector current characteristics of several different GaAs-based bipolar transistors. Photoluminescence measurements are made on the InGaP/GaInAsN DHBTs to confirm the base layer energy gap, and double crystal x-ray diffraction spectrums are used to assess strain levels in the GaInAsN base layer.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Low Vbe GaInAsN Base Heterojunction Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1389
EP - 1393
AU - Roger E. WELSER
AU - Paul M. DELUCA
AU - Alexander C. WANG
AU - Noren PAN
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50 mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels ( 3 10¹⁹ cm^-3) and dc current gain (β_max up to 100) are achieved in GaInAsN base layer structures ranging in base sheet resistance between 250 and 750 Ω/. The separate effects of a base-emitter conduction band spike and base layer energy-gap on turn-on voltage are ascertained by comparing the collector current characteristics of several different GaAs-based bipolar transistors. Photoluminescence measurements are made on the InGaP/GaInAsN DHBTs to confirm the base layer energy gap, and double crystal x-ray diffraction spectrums are used to assess strain levels in the GaInAsN base layer.
ER -

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Low V_be GaInAsN Base Heterojunction Bipolar Transistors