IEICE TRANSACTIONS on Electronics
Tunneling at the Emitter Periphery in Silicon-Germanium HBTs
Summary :
The low bias region of the base current has been studied in SiGe HBTs and shown to arise from tunneling at the emitter periphery. Tunneling also describes the reverse bias base-emitter current, which we believe is enhanced by mid-gap states. The reverse bias causes damage to the base-emitter region, increasing the base current. We also show that after a short period of severe reverse bias stress the base current displays random telegraph signals. These phenomena are often observed in silicon bipolar transistors, confirming that the incorporation of SiGe has not produced any other undesirable characteristics.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1431-1436
- Publication Date
- 2001/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
- Category
- SiGe HBTs & FETs
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Keyword
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Sean P. McALISTER, Craig STOREY, Stephen J. KOVACIC, Hugues LAFONTAINE, "Tunneling at the Emitter Periphery in Silicon-Germanium HBTs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1431-1436, October 2001, doi: .
Abstract: The low bias region of the base current has been studied in SiGe HBTs and shown to arise from tunneling at the emitter periphery. Tunneling also describes the reverse bias base-emitter current, which we believe is enhanced by mid-gap states. The reverse bias causes damage to the base-emitter region, increasing the base current. We also show that after a short period of severe reverse bias stress the base current displays random telegraph signals. These phenomena are often observed in silicon bipolar transistors, confirming that the incorporation of SiGe has not produced any other undesirable characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1431/_p
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@ARTICLE{e84-c_10_1431,
author={Sean P. McALISTER, Craig STOREY, Stephen J. KOVACIC, Hugues LAFONTAINE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Tunneling at the Emitter Periphery in Silicon-Germanium HBTs},
year={2001},
volume={E84-C},
number={10},
pages={1431-1436},
abstract={The low bias region of the base current has been studied in SiGe HBTs and shown to arise from tunneling at the emitter periphery. Tunneling also describes the reverse bias base-emitter current, which we believe is enhanced by mid-gap states. The reverse bias causes damage to the base-emitter region, increasing the base current. We also show that after a short period of severe reverse bias stress the base current displays random telegraph signals. These phenomena are often observed in silicon bipolar transistors, confirming that the incorporation of SiGe has not produced any other undesirable characteristics.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Tunneling at the Emitter Periphery in Silicon-Germanium HBTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1431
EP - 1436
AU - Sean P. McALISTER
AU - Craig STOREY
AU - Stephen J. KOVACIC
AU - Hugues LAFONTAINE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The low bias region of the base current has been studied in SiGe HBTs and shown to arise from tunneling at the emitter periphery. Tunneling also describes the reverse bias base-emitter current, which we believe is enhanced by mid-gap states. The reverse bias causes damage to the base-emitter region, increasing the base current. We also show that after a short period of severe reverse bias stress the base current displays random telegraph signals. These phenomena are often observed in silicon bipolar transistors, confirming that the incorporation of SiGe has not produced any other undesirable characteristics.
ER -
English
