We present a 5.8 GHz VCO for the 5 GHz HIPERLAN/2 and U-NII band. The VCO uses a center-tapped inductor and a substrate shield to improve phase noise. Sensitivity to supply voltage and temperature is reduced by an amplitude control block. The design is based on a distributed inductor model which allows optimization without antecedent inductor measurements. The circuit is fabricated in a 0.8 µ m 45 GHz fT low-cost SiGe-HBT technology and operates with a supply voltage of -2.0 V to -3.3 V .
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Gunter GRAU, Ulrich LANGMANN, Wolfgang WINKLER, Dieter KNOLL, Klaus PRESSEL, "A 5.8 GHz Si/SiGe VCO with Amplitude Control for Wireless LAN Applications" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1437-1441, October 2001, doi: .
Abstract: We present a 5.8 GHz VCO for the 5 GHz HIPERLAN/2 and U-NII band. The VCO uses a center-tapped inductor and a substrate shield to improve phase noise. Sensitivity to supply voltage and temperature is reduced by an amplitude control block. The design is based on a distributed inductor model which allows optimization without antecedent inductor measurements. The circuit is fabricated in a 0.8 µ m 45 GHz fT low-cost SiGe-HBT technology and operates with a supply voltage of -2.0 V to -3.3 V .
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1437/_p
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@ARTICLE{e84-c_10_1437,
author={Gunter GRAU, Ulrich LANGMANN, Wolfgang WINKLER, Dieter KNOLL, Klaus PRESSEL, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 5.8 GHz Si/SiGe VCO with Amplitude Control for Wireless LAN Applications},
year={2001},
volume={E84-C},
number={10},
pages={1437-1441},
abstract={We present a 5.8 GHz VCO for the 5 GHz HIPERLAN/2 and U-NII band. The VCO uses a center-tapped inductor and a substrate shield to improve phase noise. Sensitivity to supply voltage and temperature is reduced by an amplitude control block. The design is based on a distributed inductor model which allows optimization without antecedent inductor measurements. The circuit is fabricated in a 0.8 µ m 45 GHz fT low-cost SiGe-HBT technology and operates with a supply voltage of -2.0 V to -3.3 V .},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - A 5.8 GHz Si/SiGe VCO with Amplitude Control for Wireless LAN Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1437
EP - 1441
AU - Gunter GRAU
AU - Ulrich LANGMANN
AU - Wolfgang WINKLER
AU - Dieter KNOLL
AU - Klaus PRESSEL
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We present a 5.8 GHz VCO for the 5 GHz HIPERLAN/2 and U-NII band. The VCO uses a center-tapped inductor and a substrate shield to improve phase noise. Sensitivity to supply voltage and temperature is reduced by an amplitude control block. The design is based on a distributed inductor model which allows optimization without antecedent inductor measurements. The circuit is fabricated in a 0.8 µ m 45 GHz fT low-cost SiGe-HBT technology and operates with a supply voltage of -2.0 V to -3.3 V .
ER -