Present and Future of Magnetic RAM Technology
Summary :
Magnetic random access memory (MRAM) possesses the attractive properties of non-volatility, radiation hardness, nondestructive readout, low voltage, high access speed, unlimited read and write endurance and high density. MRAM technology is described for the devices using giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) materials in this paper. The TMR type MRAM architectures using ferromagnetic tunneling junctions (MTJ) are more attractive for mainstream RAM applications than the GMR type, because the signal of the TMR type is larger than that of the GMR type. A MRAM device with an MTJ plus MOS transistor switch architecture, which can provide large signal-to noise ratio, is detailed. A design of the MTJ element is discussed and the requirements for the junction resistance and the TMR needed for the memory device are demonstrated based on the simple signal voltage calculations. The TMR significantly decreases with increasing bias voltage, which leads to the reduction of the signal voltage for the actual MRAM. A ferromagnetic double tunneling junction is proposed for the high density MRAM application demanding large signal voltage, because of the smaller degradation of the TMR for the bias voltage, compared with that of the conventional single junctions. Recent trials of MRAM fabrication are introduced, which demonstrates high-speed access time. Finally, challenges for the higher bit density MRAM above Gb are discussed, and it is noticed that higher signal voltage, lower power consumption for writing and novel cell designs are needed for the achievement.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.6 pp.740-746
- Publication Date
- 2001/06/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Nonvolatile Memories)
- Category
- MRAM
Authors
Keyword
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Koichiro INOMATA, "Present and Future of Magnetic RAM Technology" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 740-746, June 2001, doi: .
Abstract: Magnetic random access memory (MRAM) possesses the attractive properties of non-volatility, radiation hardness, nondestructive readout, low voltage, high access speed, unlimited read and write endurance and high density. MRAM technology is described for the devices using giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) materials in this paper. The TMR type MRAM architectures using ferromagnetic tunneling junctions (MTJ) are more attractive for mainstream RAM applications than the GMR type, because the signal of the TMR type is larger than that of the GMR type. A MRAM device with an MTJ plus MOS transistor switch architecture, which can provide large signal-to noise ratio, is detailed. A design of the MTJ element is discussed and the requirements for the junction resistance and the TMR needed for the memory device are demonstrated based on the simple signal voltage calculations. The TMR significantly decreases with increasing bias voltage, which leads to the reduction of the signal voltage for the actual MRAM. A ferromagnetic double tunneling junction is proposed for the high density MRAM application demanding large signal voltage, because of the smaller degradation of the TMR for the bias voltage, compared with that of the conventional single junctions. Recent trials of MRAM fabrication are introduced, which demonstrates high-speed access time. Finally, challenges for the higher bit density MRAM above Gb are discussed, and it is noticed that higher signal voltage, lower power consumption for writing and novel cell designs are needed for the achievement.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_740/_p
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@ARTICLE{e84-c_6_740,
author={Koichiro INOMATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Present and Future of Magnetic RAM Technology},
year={2001},
volume={E84-C},
number={6},
pages={740-746},
abstract={Magnetic random access memory (MRAM) possesses the attractive properties of non-volatility, radiation hardness, nondestructive readout, low voltage, high access speed, unlimited read and write endurance and high density. MRAM technology is described for the devices using giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) materials in this paper. The TMR type MRAM architectures using ferromagnetic tunneling junctions (MTJ) are more attractive for mainstream RAM applications than the GMR type, because the signal of the TMR type is larger than that of the GMR type. A MRAM device with an MTJ plus MOS transistor switch architecture, which can provide large signal-to noise ratio, is detailed. A design of the MTJ element is discussed and the requirements for the junction resistance and the TMR needed for the memory device are demonstrated based on the simple signal voltage calculations. The TMR significantly decreases with increasing bias voltage, which leads to the reduction of the signal voltage for the actual MRAM. A ferromagnetic double tunneling junction is proposed for the high density MRAM application demanding large signal voltage, because of the smaller degradation of the TMR for the bias voltage, compared with that of the conventional single junctions. Recent trials of MRAM fabrication are introduced, which demonstrates high-speed access time. Finally, challenges for the higher bit density MRAM above Gb are discussed, and it is noticed that higher signal voltage, lower power consumption for writing and novel cell designs are needed for the achievement.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Present and Future of Magnetic RAM Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 740
EP - 746
AU - Koichiro INOMATA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - Magnetic random access memory (MRAM) possesses the attractive properties of non-volatility, radiation hardness, nondestructive readout, low voltage, high access speed, unlimited read and write endurance and high density. MRAM technology is described for the devices using giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) materials in this paper. The TMR type MRAM architectures using ferromagnetic tunneling junctions (MTJ) are more attractive for mainstream RAM applications than the GMR type, because the signal of the TMR type is larger than that of the GMR type. A MRAM device with an MTJ plus MOS transistor switch architecture, which can provide large signal-to noise ratio, is detailed. A design of the MTJ element is discussed and the requirements for the junction resistance and the TMR needed for the memory device are demonstrated based on the simple signal voltage calculations. The TMR significantly decreases with increasing bias voltage, which leads to the reduction of the signal voltage for the actual MRAM. A ferromagnetic double tunneling junction is proposed for the high density MRAM application demanding large signal voltage, because of the smaller degradation of the TMR for the bias voltage, compared with that of the conventional single junctions. Recent trials of MRAM fabrication are introduced, which demonstrates high-speed access time. Finally, challenges for the higher bit density MRAM above Gb are discussed, and it is noticed that higher signal voltage, lower power consumption for writing and novel cell designs are needed for the achievement.
ER -
English
