A Comprehensive Nonlinear GaAs FET Model Suitable for Active and Passive Circuits Design
Summary :
This paper describes an improved nonlinear GaAs FET model and its parameter extraction procedure for almost all operating conditions such as the small-signal condition, the power saturated condition, and the controlled-resistance condition. The model is capable of modeling the gate voltage dependent drain current and its derivatives in the saturated region as well as the drain voltage dependent drain current and its derivatives in the linear region. The model can take into account the frequency dispersion effects of both transconductance and output conductance. The model describes forward conduction and reverse conduction currents. Deriving the capacitance part of the model from unique charge equations satisfies charge conservation. The model accurately predicts voltage-dependent S-parameters, spurious response in an active condition and inter-modulation response in the controlled-resistance condition of a GaAs FET.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.7 pp.881-890
- Publication Date
- 2001/07/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Techniques for Constructing Microwave Simulators--Design and Analysis Tools for Electromagnetic Fields, Circuits, and Antennas--)
- Category
- Modeling of Nonlinear Microwave Circuits
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Kohei FUJII, Fadhel M. GHANNOUCHI, Toshiyuki YAKABE, Hatsuo YABE, "A Comprehensive Nonlinear GaAs FET Model Suitable for Active and Passive Circuits Design" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 7, pp. 881-890, July 2001, doi: .
Abstract: This paper describes an improved nonlinear GaAs FET model and its parameter extraction procedure for almost all operating conditions such as the small-signal condition, the power saturated condition, and the controlled-resistance condition. The model is capable of modeling the gate voltage dependent drain current and its derivatives in the saturated region as well as the drain voltage dependent drain current and its derivatives in the linear region. The model can take into account the frequency dispersion effects of both transconductance and output conductance. The model describes forward conduction and reverse conduction currents. Deriving the capacitance part of the model from unique charge equations satisfies charge conservation. The model accurately predicts voltage-dependent S-parameters, spurious response in an active condition and inter-modulation response in the controlled-resistance condition of a GaAs FET.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_7_881/_p
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@ARTICLE{e84-c_7_881,
author={Kohei FUJII, Fadhel M. GHANNOUCHI, Toshiyuki YAKABE, Hatsuo YABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Comprehensive Nonlinear GaAs FET Model Suitable for Active and Passive Circuits Design},
year={2001},
volume={E84-C},
number={7},
pages={881-890},
abstract={This paper describes an improved nonlinear GaAs FET model and its parameter extraction procedure for almost all operating conditions such as the small-signal condition, the power saturated condition, and the controlled-resistance condition. The model is capable of modeling the gate voltage dependent drain current and its derivatives in the saturated region as well as the drain voltage dependent drain current and its derivatives in the linear region. The model can take into account the frequency dispersion effects of both transconductance and output conductance. The model describes forward conduction and reverse conduction currents. Deriving the capacitance part of the model from unique charge equations satisfies charge conservation. The model accurately predicts voltage-dependent S-parameters, spurious response in an active condition and inter-modulation response in the controlled-resistance condition of a GaAs FET.},
keywords={},
doi={},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - A Comprehensive Nonlinear GaAs FET Model Suitable for Active and Passive Circuits Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 881
EP - 890
AU - Kohei FUJII
AU - Fadhel M. GHANNOUCHI
AU - Toshiyuki YAKABE
AU - Hatsuo YABE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2001
AB - This paper describes an improved nonlinear GaAs FET model and its parameter extraction procedure for almost all operating conditions such as the small-signal condition, the power saturated condition, and the controlled-resistance condition. The model is capable of modeling the gate voltage dependent drain current and its derivatives in the saturated region as well as the drain voltage dependent drain current and its derivatives in the linear region. The model can take into account the frequency dispersion effects of both transconductance and output conductance. The model describes forward conduction and reverse conduction currents. Deriving the capacitance part of the model from unique charge equations satisfies charge conservation. The model accurately predicts voltage-dependent S-parameters, spurious response in an active condition and inter-modulation response in the controlled-resistance condition of a GaAs FET.
ER -
English
