IEICE TRANSACTIONS on Electronics
Fabrication and Recording Characteristics of Sputter-Deposited Ba-Ferrite Thin Films Deposited on Pt-Ta Underlayers for Perpendicular Magnetic Recording Media
Summary :
Magnetoplumbite type Ba ferrite (BaM) disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more effective than ZnO underlayers to promote c-axis orientation of BaM layers, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50 nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.9 pp.1137-1141
- Publication Date
- 2001/09/01
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- Special Section PAPER (Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology)
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Shigeki NAKAGAWA, Nobuhiko FUNABASHI, Jie FENG, Masahiko NAOE, "Fabrication and Recording Characteristics of Sputter-Deposited Ba-Ferrite Thin Films Deposited on Pt-Ta Underlayers for Perpendicular Magnetic Recording Media" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 9, pp. 1137-1141, September 2001, doi: .
Abstract: Magnetoplumbite type Ba ferrite (BaM) disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more effective than ZnO underlayers to promote c-axis orientation of BaM layers, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50 nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_9_1137/_p
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@ARTICLE{e84-c_9_1137,
author={Shigeki NAKAGAWA, Nobuhiko FUNABASHI, Jie FENG, Masahiko NAOE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication and Recording Characteristics of Sputter-Deposited Ba-Ferrite Thin Films Deposited on Pt-Ta Underlayers for Perpendicular Magnetic Recording Media},
year={2001},
volume={E84-C},
number={9},
pages={1137-1141},
abstract={Magnetoplumbite type Ba ferrite (BaM) disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more effective than ZnO underlayers to promote c-axis orientation of BaM layers, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50 nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Fabrication and Recording Characteristics of Sputter-Deposited Ba-Ferrite Thin Films Deposited on Pt-Ta Underlayers for Perpendicular Magnetic Recording Media
T2 - IEICE TRANSACTIONS on Electronics
SP - 1137
EP - 1141
AU - Shigeki NAKAGAWA
AU - Nobuhiko FUNABASHI
AU - Jie FENG
AU - Masahiko NAOE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2001
AB - Magnetoplumbite type Ba ferrite (BaM) disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more effective than ZnO underlayers to promote c-axis orientation of BaM layers, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50 nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.
ER -
English
