IEICE TRANSACTIONS on Electronics
The Evolution of Nitride-Based Light-Emitting Devices
Summary :
Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue and green light-emitting diodes and long-lived violet laser diodes and so on. All of these nitride-based devices are robust and the most environmentally-friendly ones available. They enable us to save tremendous amount of energy and will be key devices in advanced information technology. Further progress in the area of crystal growth and device engineering will open up new frontier devices based on nitride semiconductors. In this paper, the evolution of nitride-based light-emitting devices is reviewed and the key issues, which must be addressed for nitrides to be fully developed, are discussed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.1 pp.2-9
- Publication Date
- 2002/01/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
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Isamu AKASAKI, Satoshi KAMIYAMA, Hiroshi AMANO, "The Evolution of Nitride-Based Light-Emitting Devices" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 1, pp. 2-9, January 2002, doi: .
Abstract: Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue and green light-emitting diodes and long-lived violet laser diodes and so on. All of these nitride-based devices are robust and the most environmentally-friendly ones available. They enable us to save tremendous amount of energy and will be key devices in advanced information technology. Further progress in the area of crystal growth and device engineering will open up new frontier devices based on nitride semiconductors. In this paper, the evolution of nitride-based light-emitting devices is reviewed and the key issues, which must be addressed for nitrides to be fully developed, are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_1_2/_p
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@ARTICLE{e85-c_1_2,
author={Isamu AKASAKI, Satoshi KAMIYAMA, Hiroshi AMANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Evolution of Nitride-Based Light-Emitting Devices},
year={2002},
volume={E85-C},
number={1},
pages={2-9},
abstract={Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue and green light-emitting diodes and long-lived violet laser diodes and so on. All of these nitride-based devices are robust and the most environmentally-friendly ones available. They enable us to save tremendous amount of energy and will be key devices in advanced information technology. Further progress in the area of crystal growth and device engineering will open up new frontier devices based on nitride semiconductors. In this paper, the evolution of nitride-based light-emitting devices is reviewed and the key issues, which must be addressed for nitrides to be fully developed, are discussed.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - The Evolution of Nitride-Based Light-Emitting Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 2
EP - 9
AU - Isamu AKASAKI
AU - Satoshi KAMIYAMA
AU - Hiroshi AMANO
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2002
AB - Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue and green light-emitting diodes and long-lived violet laser diodes and so on. All of these nitride-based devices are robust and the most environmentally-friendly ones available. They enable us to save tremendous amount of energy and will be key devices in advanced information technology. Further progress in the area of crystal growth and device engineering will open up new frontier devices based on nitride semiconductors. In this paper, the evolution of nitride-based light-emitting devices is reviewed and the key issues, which must be addressed for nitrides to be fully developed, are discussed.
ER -
English
