The methods for the transverse mode control and temperature characteristics improvement in 850 nm oxide confined vertical cavity surface emitting lasers (VCSELs) were investigated. For transverse mode control, dielectric aperture was demonstrated to suppress higher order modes. Substitution of AlAs for Al0.9Ga0.1As in partial bottom DBR was demonstrated to reduce thermal resistance of the devices and to enable operation in high temperature of 85
Natsumi UEDA
Masato TACHIBANA
Norihiro IWAI
Tatsuyuki SHINAGAWA
Maiko ARIGA
Yasumasa SASAKI
Noriyuki YOKOUCHI
Yasukazu SHIINA
Akihiko KASUKAWA
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Natsumi UEDA, Masato TACHIBANA, Norihiro IWAI, Tatsuyuki SHINAGAWA, Maiko ARIGA, Yasumasa SASAKI, Noriyuki YOKOUCHI, Yasukazu SHIINA, Akihiko KASUKAWA, "Transverse Mode Control and Reduction of Thermal Resistance in 850 nm Oxide Confined VCSELs" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 1, pp. 64-70, January 2002, doi: .
Abstract: The methods for the transverse mode control and temperature characteristics improvement in 850 nm oxide confined vertical cavity surface emitting lasers (VCSELs) were investigated. For transverse mode control, dielectric aperture was demonstrated to suppress higher order modes. Substitution of AlAs for Al0.9Ga0.1As in partial bottom DBR was demonstrated to reduce thermal resistance of the devices and to enable operation in high temperature of 85
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_1_64/_p
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@ARTICLE{e85-c_1_64,
author={Natsumi UEDA, Masato TACHIBANA, Norihiro IWAI, Tatsuyuki SHINAGAWA, Maiko ARIGA, Yasumasa SASAKI, Noriyuki YOKOUCHI, Yasukazu SHIINA, Akihiko KASUKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Transverse Mode Control and Reduction of Thermal Resistance in 850 nm Oxide Confined VCSELs},
year={2002},
volume={E85-C},
number={1},
pages={64-70},
abstract={The methods for the transverse mode control and temperature characteristics improvement in 850 nm oxide confined vertical cavity surface emitting lasers (VCSELs) were investigated. For transverse mode control, dielectric aperture was demonstrated to suppress higher order modes. Substitution of AlAs for Al0.9Ga0.1As in partial bottom DBR was demonstrated to reduce thermal resistance of the devices and to enable operation in high temperature of 85
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - Transverse Mode Control and Reduction of Thermal Resistance in 850 nm Oxide Confined VCSELs
T2 - IEICE TRANSACTIONS on Electronics
SP - 64
EP - 70
AU - Natsumi UEDA
AU - Masato TACHIBANA
AU - Norihiro IWAI
AU - Tatsuyuki SHINAGAWA
AU - Maiko ARIGA
AU - Yasumasa SASAKI
AU - Noriyuki YOKOUCHI
AU - Yasukazu SHIINA
AU - Akihiko KASUKAWA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2002
AB - The methods for the transverse mode control and temperature characteristics improvement in 850 nm oxide confined vertical cavity surface emitting lasers (VCSELs) were investigated. For transverse mode control, dielectric aperture was demonstrated to suppress higher order modes. Substitution of AlAs for Al0.9Ga0.1As in partial bottom DBR was demonstrated to reduce thermal resistance of the devices and to enable operation in high temperature of 85
ER -