We have fabricated ramp-type Josephson junctions in trilayer structures. A bilayer of YBa2Cu3O7-x (YBCO)/CeO2 was deposited on a SrTiO3 (100) substrate. Then, circle patterns with a diameter of 2 µm were etched on the bilayer surface using standard photolithography process. During the Ar ion milling with an incident angle of 45 degrees to the bilayer surface, the sample was rotated. This process led to upside-down conical formations. After the ramp-edge surface was modified, another YBCO film was deposited for the top electrode. The junctions showed the I-V characteristics between resistively shunted junction and flux-flow types.
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Masayuki MATSUSHITA, Yoichi OKABE, "Interface-Modified Ramp-Type Josephson Junctions in Trilayer Structures" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 769-771, March 2002, doi: .
Abstract: We have fabricated ramp-type Josephson junctions in trilayer structures. A bilayer of YBa2Cu3O7-x (YBCO)/CeO2 was deposited on a SrTiO3 (100) substrate. Then, circle patterns with a diameter of 2 µm were etched on the bilayer surface using standard photolithography process. During the Ar ion milling with an incident angle of 45 degrees to the bilayer surface, the sample was rotated. This process led to upside-down conical formations. After the ramp-edge surface was modified, another YBCO film was deposited for the top electrode. The junctions showed the I-V characteristics between resistively shunted junction and flux-flow types.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_769/_p
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@ARTICLE{e85-c_3_769,
author={Masayuki MATSUSHITA, Yoichi OKABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Interface-Modified Ramp-Type Josephson Junctions in Trilayer Structures},
year={2002},
volume={E85-C},
number={3},
pages={769-771},
abstract={We have fabricated ramp-type Josephson junctions in trilayer structures. A bilayer of YBa2Cu3O7-x (YBCO)/CeO2 was deposited on a SrTiO3 (100) substrate. Then, circle patterns with a diameter of 2 µm were etched on the bilayer surface using standard photolithography process. During the Ar ion milling with an incident angle of 45 degrees to the bilayer surface, the sample was rotated. This process led to upside-down conical formations. After the ramp-edge surface was modified, another YBCO film was deposited for the top electrode. The junctions showed the I-V characteristics between resistively shunted junction and flux-flow types.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - Interface-Modified Ramp-Type Josephson Junctions in Trilayer Structures
T2 - IEICE TRANSACTIONS on Electronics
SP - 769
EP - 771
AU - Masayuki MATSUSHITA
AU - Yoichi OKABE
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - We have fabricated ramp-type Josephson junctions in trilayer structures. A bilayer of YBa2Cu3O7-x (YBCO)/CeO2 was deposited on a SrTiO3 (100) substrate. Then, circle patterns with a diameter of 2 µm were etched on the bilayer surface using standard photolithography process. During the Ar ion milling with an incident angle of 45 degrees to the bilayer surface, the sample was rotated. This process led to upside-down conical formations. After the ramp-edge surface was modified, another YBCO film was deposited for the top electrode. The junctions showed the I-V characteristics between resistively shunted junction and flux-flow types.
ER -