The search functionality is under construction.
The search functionality is under construction.

Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System

Yuri KUSAKARI, Masatoshi MORIKAWA, Kazunori ONOZAWA, Iwamichi KOHJIRO, Isao YOSHIDA

  • Full Text Views

    0

  • Cite this

Summary :

A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ωmm, a breakdown voltage of 13 V, and a cut-off frequency of 11 GHz. The RF performance of the device achieved an output power (Pout) of 1.8 W, a power gain of 10 dB, and a power-added efficiency (ηadd) of 60%. In addition, an RF power module using our proposed power MOSFET achieved an output power of 4 W and a total efficiency of 50%.

Publication
IEICE TRANSACTIONS on Electronics Vol.E85-C No.7 pp.1436-1442
Publication Date
2002/07/01
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category

Authors

Keyword