A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ω
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Yuri KUSAKARI, Masatoshi MORIKAWA, Kazunori ONOZAWA, Iwamichi KOHJIRO, Isao YOSHIDA, "Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1436-1442, July 2002, doi: .
Abstract: A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ω
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1436/_p
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@ARTICLE{e85-c_7_1436,
author={Yuri KUSAKARI, Masatoshi MORIKAWA, Kazunori ONOZAWA, Iwamichi KOHJIRO, Isao YOSHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System},
year={2002},
volume={E85-C},
number={7},
pages={1436-1442},
abstract={A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ω
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System
T2 - IEICE TRANSACTIONS on Electronics
SP - 1436
EP - 1442
AU - Yuri KUSAKARI
AU - Masatoshi MORIKAWA
AU - Kazunori ONOZAWA
AU - Iwamichi KOHJIRO
AU - Isao YOSHIDA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ω
ER -