Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System

Yuri KUSAKARI; Masatoshi MORIKAWA; Kazunori ONOZAWA; Iwamichi KOHJIRO; Isao YOSHIDA

Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System

Yuri KUSAKARI, Masatoshi MORIKAWA, Kazunori ONOZAWA, Iwamichi KOHJIRO, Isao YOSHIDA

Full Text Views

0

Cite this

Summary :

A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ωmm, a breakdown voltage of 13 V, and a cut-off frequency of 11 GHz. The RF performance of the device achieved an output power (P_out) of 1.8 W, a power gain of 10 dB, and a power-added efficiency (η_add) of 60%. In addition, an RF power module using our proposed power MOSFET achieved an output power of 4 W and a total efficiency of 50%.

Publication: IEICE TRANSACTIONS on Electronics Vol.E85-C No.7 pp.1436-1442

Publication Date: 2002/07/01

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)

Category

Cite this

Copy

Yuri KUSAKARI, Masatoshi MORIKAWA, Kazunori ONOZAWA, Iwamichi KOHJIRO, Isao YOSHIDA, "Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System" in IEICE TRANSACTIONS on Electronics, vol. E85-C, no. 7, pp. 1436-1442, July 2002, doi: .
Abstract: A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ωmm, a breakdown voltage of 13 V, and a cut-off frequency of 11 GHz. The RF performance of the device achieved an output power (P_out) of 1.8 W, a power gain of 10 dB, and a power-added efficiency (η_add) of 60%. In addition, an RF power module using our proposed power MOSFET achieved an output power of 4 W and a total efficiency of 50%.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1436/_p

Copy

@ARTICLE{e85-c_7_1436,
author={Yuri KUSAKARI, Masatoshi MORIKAWA, Kazunori ONOZAWA, Iwamichi KOHJIRO, Isao YOSHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System},
year={2002},
volume={E85-C},
number={7},
pages={1436-1442},
abstract={A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ωmm, a breakdown voltage of 13 V, and a cut-off frequency of 11 GHz. The RF performance of the device achieved an output power (P_out) of 1.8 W, a power gain of 10 dB, and a power-added efficiency (η_add) of 60%. In addition, an RF power module using our proposed power MOSFET achieved an output power of 4 W and a total efficiency of 50%.},
keywords={},
doi={},
ISSN={},
month={July},}

Copy

TY - JOUR
TI - Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System
T2 - IEICE TRANSACTIONS on Electronics
SP - 1436
EP - 1442
AU - Yuri KUSAKARI
AU - Masatoshi MORIKAWA
AU - Kazunori ONOZAWA
AU - Iwamichi KOHJIRO
AU - Isao YOSHIDA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ωmm, a breakdown voltage of 13 V, and a cut-off frequency of 11 GHz. The RF performance of the device achieved an output power (P_out) of 1.8 W, a power gain of 10 dB, and a power-added efficiency (η_add) of 60%. In addition, an RF power module using our proposed power MOSFET achieved an output power of 4 W and a total efficiency of 50%.
ER -