As new applications of THz waves emerge, new active and passive components need to be developed. The efficiency of wave guiding systems can be significantly increased with the use of MEMS approaches as well as with the development of new planar antenna concepts with high bunching properties. Generation of sufficient THz power relies on new active devices like Heterostructure Barrier Varactors and cascaded quantum structures, but also in the optimisation of new generation concepts. One of these is photomixing in non-linear materials with very short carrier lifetimes, like low-temperature-grown GaAs.
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Hans L. HARTNAGEL, Manuel RODRIGUEZ-GIRONES, "Current Status and Future Prospects of Semiconductor Terahertz Electronics" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 1911-1915, October 2003, doi: .
Abstract: As new applications of THz waves emerge, new active and passive components need to be developed. The efficiency of wave guiding systems can be significantly increased with the use of MEMS approaches as well as with the development of new planar antenna concepts with high bunching properties. Generation of sufficient THz power relies on new active devices like Heterostructure Barrier Varactors and cascaded quantum structures, but also in the optimisation of new generation concepts. One of these is photomixing in non-linear materials with very short carrier lifetimes, like low-temperature-grown GaAs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1911/_p
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@ARTICLE{e86-c_10_1911,
author={Hans L. HARTNAGEL, Manuel RODRIGUEZ-GIRONES, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current Status and Future Prospects of Semiconductor Terahertz Electronics},
year={2003},
volume={E86-C},
number={10},
pages={1911-1915},
abstract={As new applications of THz waves emerge, new active and passive components need to be developed. The efficiency of wave guiding systems can be significantly increased with the use of MEMS approaches as well as with the development of new planar antenna concepts with high bunching properties. Generation of sufficient THz power relies on new active devices like Heterostructure Barrier Varactors and cascaded quantum structures, but also in the optimisation of new generation concepts. One of these is photomixing in non-linear materials with very short carrier lifetimes, like low-temperature-grown GaAs.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Current Status and Future Prospects of Semiconductor Terahertz Electronics
T2 - IEICE TRANSACTIONS on Electronics
SP - 1911
EP - 1915
AU - Hans L. HARTNAGEL
AU - Manuel RODRIGUEZ-GIRONES
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - As new applications of THz waves emerge, new active and passive components need to be developed. The efficiency of wave guiding systems can be significantly increased with the use of MEMS approaches as well as with the development of new planar antenna concepts with high bunching properties. Generation of sufficient THz power relies on new active devices like Heterostructure Barrier Varactors and cascaded quantum structures, but also in the optimisation of new generation concepts. One of these is photomixing in non-linear materials with very short carrier lifetimes, like low-temperature-grown GaAs.
ER -