IEICE TRANSACTIONS on Electronics
Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors
Summary :
This paper describes an experimental study on resonant properties of the plasma-wave field-effect transistors (PW-FET's). The PW-FET is a new type of the electron devices, which utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. Frequency tunability of plasma-wave resonance in the terahertz range was experimentally investigated for sub 100-nm gate-length GaAs MESFET's by means of laser-photo-mixing terahertz excitation. The measured results, including the first observation of the third-harmonic resonance in the terahertz range, however, fairly deviate from the ideal characteristics expected for an ideal 2-D confined electron systems. The steady-state electronic charge distribution in the MESFET channel under laser illumination was analyzed to study the effect of insufficient carrier confinement on the frequency tunability. The simulated results support the measured results. It was clarified that an ideal heterostructure 2-D electron confinement is essential to assuring smooth, monotonic frequency tunability of plasma-wave resonance.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.1985-1993
- Publication Date
- 2003/10/01
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- Type of Manuscript
- Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
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Taiichi OTSUJI, Yoshihiro KANAMARU, Hajime KITAMURA, Mitsuru MATSUOKA, Osamu OGAWARA, "Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 1985-1993, October 2003, doi: .
Abstract: This paper describes an experimental study on resonant properties of the plasma-wave field-effect transistors (PW-FET's). The PW-FET is a new type of the electron devices, which utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. Frequency tunability of plasma-wave resonance in the terahertz range was experimentally investigated for sub 100-nm gate-length GaAs MESFET's by means of laser-photo-mixing terahertz excitation. The measured results, including the first observation of the third-harmonic resonance in the terahertz range, however, fairly deviate from the ideal characteristics expected for an ideal 2-D confined electron systems. The steady-state electronic charge distribution in the MESFET channel under laser illumination was analyzed to study the effect of insufficient carrier confinement on the frequency tunability. The simulated results support the measured results. It was clarified that an ideal heterostructure 2-D electron confinement is essential to assuring smooth, monotonic frequency tunability of plasma-wave resonance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1985/_p
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@ARTICLE{e86-c_10_1985,
author={Taiichi OTSUJI, Yoshihiro KANAMARU, Hajime KITAMURA, Mitsuru MATSUOKA, Osamu OGAWARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors},
year={2003},
volume={E86-C},
number={10},
pages={1985-1993},
abstract={This paper describes an experimental study on resonant properties of the plasma-wave field-effect transistors (PW-FET's). The PW-FET is a new type of the electron devices, which utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. Frequency tunability of plasma-wave resonance in the terahertz range was experimentally investigated for sub 100-nm gate-length GaAs MESFET's by means of laser-photo-mixing terahertz excitation. The measured results, including the first observation of the third-harmonic resonance in the terahertz range, however, fairly deviate from the ideal characteristics expected for an ideal 2-D confined electron systems. The steady-state electronic charge distribution in the MESFET channel under laser illumination was analyzed to study the effect of insufficient carrier confinement on the frequency tunability. The simulated results support the measured results. It was clarified that an ideal heterostructure 2-D electron confinement is essential to assuring smooth, monotonic frequency tunability of plasma-wave resonance.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1985
EP - 1993
AU - Taiichi OTSUJI
AU - Yoshihiro KANAMARU
AU - Hajime KITAMURA
AU - Mitsuru MATSUOKA
AU - Osamu OGAWARA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - This paper describes an experimental study on resonant properties of the plasma-wave field-effect transistors (PW-FET's). The PW-FET is a new type of the electron devices, which utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. Frequency tunability of plasma-wave resonance in the terahertz range was experimentally investigated for sub 100-nm gate-length GaAs MESFET's by means of laser-photo-mixing terahertz excitation. The measured results, including the first observation of the third-harmonic resonance in the terahertz range, however, fairly deviate from the ideal characteristics expected for an ideal 2-D confined electron systems. The steady-state electronic charge distribution in the MESFET channel under laser illumination was analyzed to study the effect of insufficient carrier confinement on the frequency tunability. The simulated results support the measured results. It was clarified that an ideal heterostructure 2-D electron confinement is essential to assuring smooth, monotonic frequency tunability of plasma-wave resonance.
ER -
English
