Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems
Summary :
Fundamental perspective of high power devices and amplifiers for use in wireless communication systems are described in this paper. First, high power devices and device modeling techniques are presented, focusing on the emerging device technologies such as wide bandgap devices (GaN, SiC) and SiGe devices. Then the commercially available device, circuit and system simulators for wireless communication applications are introduced. Recent active load-pull measurements have made a remarkable progress in fundamental, harmonic, and envelope frequencies for high efficiency and low distortion designs. In addition, pulsed DC/RF and on wafer load-pull measurements have also become popular, which are briefly reviewed. Finally the advances in high power amplifier design techniques for achieving high efficiency and low distortion are presented.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.2 pp.108-119
- Publication Date
- 2003/02/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Circuit and Device Technology for High-Speed Wireless Communication)
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Yasushi ITOH, Kazuhiko HONJO, "Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 2, pp. 108-119, February 2003, doi: .
Abstract: Fundamental perspective of high power devices and amplifiers for use in wireless communication systems are described in this paper. First, high power devices and device modeling techniques are presented, focusing on the emerging device technologies such as wide bandgap devices (GaN, SiC) and SiGe devices. Then the commercially available device, circuit and system simulators for wireless communication applications are introduced. Recent active load-pull measurements have made a remarkable progress in fundamental, harmonic, and envelope frequencies for high efficiency and low distortion designs. In addition, pulsed DC/RF and on wafer load-pull measurements have also become popular, which are briefly reviewed. Finally the advances in high power amplifier design techniques for achieving high efficiency and low distortion are presented.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_2_108/_p
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@ARTICLE{e86-c_2_108,
author={Yasushi ITOH, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems},
year={2003},
volume={E86-C},
number={2},
pages={108-119},
abstract={Fundamental perspective of high power devices and amplifiers for use in wireless communication systems are described in this paper. First, high power devices and device modeling techniques are presented, focusing on the emerging device technologies such as wide bandgap devices (GaN, SiC) and SiGe devices. Then the commercially available device, circuit and system simulators for wireless communication applications are introduced. Recent active load-pull measurements have made a remarkable progress in fundamental, harmonic, and envelope frequencies for high efficiency and low distortion designs. In addition, pulsed DC/RF and on wafer load-pull measurements have also become popular, which are briefly reviewed. Finally the advances in high power amplifier design techniques for achieving high efficiency and low distortion are presented.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 108
EP - 119
AU - Yasushi ITOH
AU - Kazuhiko HONJO
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2003
AB - Fundamental perspective of high power devices and amplifiers for use in wireless communication systems are described in this paper. First, high power devices and device modeling techniques are presented, focusing on the emerging device technologies such as wide bandgap devices (GaN, SiC) and SiGe devices. Then the commercially available device, circuit and system simulators for wireless communication applications are introduced. Recent active load-pull measurements have made a remarkable progress in fundamental, harmonic, and envelope frequencies for high efficiency and low distortion designs. In addition, pulsed DC/RF and on wafer load-pull measurements have also become popular, which are briefly reviewed. Finally the advances in high power amplifier design techniques for achieving high efficiency and low distortion are presented.
ER -
English
