IEICE TRANSACTIONS on Electronics
Simulation of the Geiger Mode Operation of a Single Photon Detection Avalanche Photodiode
Summary :
Detection efficiency and dark count of a Geiger mode single photon detection avalanche photodiode was studied by a numerical simulation. The ionization process triggered by a single hole injection was simulated at a bias voltage slightly greater than the avalanche breakdown voltage for calculation of the detection efficiency. Tunneling effect in the multiplication layer was taken into account for the dark count simulation. In the gated-mode operation, the avalanche build-up time also affects on the signal to noise ratio. The multiplication layer thickness is a key parameter for the device performances.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.7 pp.1366-1369
- Publication Date
- 2003/07/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Lasers, Quantum Electronics
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Toshiaki KAGAWA, "Simulation of the Geiger Mode Operation of a Single Photon Detection Avalanche Photodiode" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 7, pp. 1366-1369, July 2003, doi: .
Abstract: Detection efficiency and dark count of a Geiger mode single photon detection avalanche photodiode was studied by a numerical simulation. The ionization process triggered by a single hole injection was simulated at a bias voltage slightly greater than the avalanche breakdown voltage for calculation of the detection efficiency. Tunneling effect in the multiplication layer was taken into account for the dark count simulation. In the gated-mode operation, the avalanche build-up time also affects on the signal to noise ratio. The multiplication layer thickness is a key parameter for the device performances.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_7_1366/_p
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@ARTICLE{e86-c_7_1366,
author={Toshiaki KAGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of the Geiger Mode Operation of a Single Photon Detection Avalanche Photodiode},
year={2003},
volume={E86-C},
number={7},
pages={1366-1369},
abstract={Detection efficiency and dark count of a Geiger mode single photon detection avalanche photodiode was studied by a numerical simulation. The ionization process triggered by a single hole injection was simulated at a bias voltage slightly greater than the avalanche breakdown voltage for calculation of the detection efficiency. Tunneling effect in the multiplication layer was taken into account for the dark count simulation. In the gated-mode operation, the avalanche build-up time also affects on the signal to noise ratio. The multiplication layer thickness is a key parameter for the device performances.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Simulation of the Geiger Mode Operation of a Single Photon Detection Avalanche Photodiode
T2 - IEICE TRANSACTIONS on Electronics
SP - 1366
EP - 1369
AU - Toshiaki KAGAWA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2003
AB - Detection efficiency and dark count of a Geiger mode single photon detection avalanche photodiode was studied by a numerical simulation. The ionization process triggered by a single hole injection was simulated at a bias voltage slightly greater than the avalanche breakdown voltage for calculation of the detection efficiency. Tunneling effect in the multiplication layer was taken into account for the dark count simulation. In the gated-mode operation, the avalanche build-up time also affects on the signal to noise ratio. The multiplication layer thickness is a key parameter for the device performances.
ER -
English
