Fabrication of Organic Transistors Using BEDT-TTF and (BEDT-TTF)(TCNQ) CT-Complex Films
Summary :
Organic field-effect transistors (FETs) which employ (BEDT-TTF)(TCNQ) films for active layer have been fabricated and characterized. Their FET characteristics exhibited both p-channel and n-channel operation by changing the gate and drain voltages. For a particular bias condition, the I-V curves revealed behavior where both electrons and holes simultaneously are injected from source and drain electrodes. These bipolar type characteristics are strongly related to the structure of donor and acceptor molecular layers. The degree of charge transfer of approximately 0.2 was estimated by Raman spectroscopy.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E87-C No.12 pp.2049-2052
- Publication Date
- 2004/12/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics)
- Category
- Characterization and Abilities of Organic Electronic Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Hirotaka SAKUMA, Masatoshi SAKAI, Masaaki IIZUKA, Masakazu NAKAMURA, Kazuhiro KUDO, "Fabrication of Organic Transistors Using BEDT-TTF and (BEDT-TTF)(TCNQ) CT-Complex Films" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 12, pp. 2049-2052, December 2004, doi: .
Abstract: Organic field-effect transistors (FETs) which employ (BEDT-TTF)(TCNQ) films for active layer have been fabricated and characterized. Their FET characteristics exhibited both p-channel and n-channel operation by changing the gate and drain voltages. For a particular bias condition, the I-V curves revealed behavior where both electrons and holes simultaneously are injected from source and drain electrodes. These bipolar type characteristics are strongly related to the structure of donor and acceptor molecular layers. The degree of charge transfer of approximately 0.2 was estimated by Raman spectroscopy.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_12_2049/_p
Copy
@ARTICLE{e87-c_12_2049,
author={Hirotaka SAKUMA, Masatoshi SAKAI, Masaaki IIZUKA, Masakazu NAKAMURA, Kazuhiro KUDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of Organic Transistors Using BEDT-TTF and (BEDT-TTF)(TCNQ) CT-Complex Films},
year={2004},
volume={E87-C},
number={12},
pages={2049-2052},
abstract={Organic field-effect transistors (FETs) which employ (BEDT-TTF)(TCNQ) films for active layer have been fabricated and characterized. Their FET characteristics exhibited both p-channel and n-channel operation by changing the gate and drain voltages. For a particular bias condition, the I-V curves revealed behavior where both electrons and holes simultaneously are injected from source and drain electrodes. These bipolar type characteristics are strongly related to the structure of donor and acceptor molecular layers. The degree of charge transfer of approximately 0.2 was estimated by Raman spectroscopy.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - Fabrication of Organic Transistors Using BEDT-TTF and (BEDT-TTF)(TCNQ) CT-Complex Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 2049
EP - 2052
AU - Hirotaka SAKUMA
AU - Masatoshi SAKAI
AU - Masaaki IIZUKA
AU - Masakazu NAKAMURA
AU - Kazuhiro KUDO
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2004
AB - Organic field-effect transistors (FETs) which employ (BEDT-TTF)(TCNQ) films for active layer have been fabricated and characterized. Their FET characteristics exhibited both p-channel and n-channel operation by changing the gate and drain voltages. For a particular bias condition, the I-V curves revealed behavior where both electrons and holes simultaneously are injected from source and drain electrodes. These bipolar type characteristics are strongly related to the structure of donor and acceptor molecular layers. The degree of charge transfer of approximately 0.2 was estimated by Raman spectroscopy.
ER -
English
