In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering
Summary :
We have investigated the in-situ N2-plasma nitridation for high-k HfN gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering to improve the electrical characteristics. It was found that the increase of nitridation gas pressure for the deposited HfN1.1 gate insulator, such as 98 mPa, decreased both the hysteresis width in C-V characteristics and leakage current. Furthermore, the 2-step nitiridation process with the nitridation gas pressure of 26 mPa followed by the nitridation at 98 mPa realized the decrease of equivalent oxide thickness (EOT) to 0.9 nm with decreasing the hysteresis width and leakage current. The fabricated metal-insulator-semiconductor field-effect transistor (MISFET) with 2-step nitridation showed a steep subthreshold swing of 87 mV/dec.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E103-C No.6 pp.299-303
- Publication Date
- 2020/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2019FUP0001
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
- Semiconductor Materials and Devices
Authors
Shun-ichiro OHMI
Tokyo Institute of Technology
Shin ISHIMATSU
Tokyo Institute of Technology
Yuske HORIUCHI
Tokyo Institute of Technology
Sohya KUDOH
Tokyo Institute of Technology
Keyword
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Shun-ichiro OHMI, Shin ISHIMATSU, Yuske HORIUCHI, Sohya KUDOH, "In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 6, pp. 299-303, June 2020, doi: 10.1587/transele.2019FUP0001.
Abstract: We have investigated the in-situ N2-plasma nitridation for high-k HfN gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering to improve the electrical characteristics. It was found that the increase of nitridation gas pressure for the deposited HfN1.1 gate insulator, such as 98 mPa, decreased both the hysteresis width in C-V characteristics and leakage current. Furthermore, the 2-step nitiridation process with the nitridation gas pressure of 26 mPa followed by the nitridation at 98 mPa realized the decrease of equivalent oxide thickness (EOT) to 0.9 nm with decreasing the hysteresis width and leakage current. The fabricated metal-insulator-semiconductor field-effect transistor (MISFET) with 2-step nitridation showed a steep subthreshold swing of 87 mV/dec.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019FUP0001/_p
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@ARTICLE{e103-c_6_299,
author={Shun-ichiro OHMI, Shin ISHIMATSU, Yuske HORIUCHI, Sohya KUDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering},
year={2020},
volume={E103-C},
number={6},
pages={299-303},
abstract={We have investigated the in-situ N2-plasma nitridation for high-k HfN gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering to improve the electrical characteristics. It was found that the increase of nitridation gas pressure for the deposited HfN1.1 gate insulator, such as 98 mPa, decreased both the hysteresis width in C-V characteristics and leakage current. Furthermore, the 2-step nitiridation process with the nitridation gas pressure of 26 mPa followed by the nitridation at 98 mPa realized the decrease of equivalent oxide thickness (EOT) to 0.9 nm with decreasing the hysteresis width and leakage current. The fabricated metal-insulator-semiconductor field-effect transistor (MISFET) with 2-step nitridation showed a steep subthreshold swing of 87 mV/dec.},
keywords={},
doi={10.1587/transele.2019FUP0001},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering
T2 - IEICE TRANSACTIONS on Electronics
SP - 299
EP - 303
AU - Shun-ichiro OHMI
AU - Shin ISHIMATSU
AU - Yuske HORIUCHI
AU - Sohya KUDOH
PY - 2020
DO - 10.1587/transele.2019FUP0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2020
AB - We have investigated the in-situ N2-plasma nitridation for high-k HfN gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering to improve the electrical characteristics. It was found that the increase of nitridation gas pressure for the deposited HfN1.1 gate insulator, such as 98 mPa, decreased both the hysteresis width in C-V characteristics and leakage current. Furthermore, the 2-step nitiridation process with the nitridation gas pressure of 26 mPa followed by the nitridation at 98 mPa realized the decrease of equivalent oxide thickness (EOT) to 0.9 nm with decreasing the hysteresis width and leakage current. The fabricated metal-insulator-semiconductor field-effect transistor (MISFET) with 2-step nitridation showed a steep subthreshold swing of 87 mV/dec.
ER -
English
