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Fabrication of Silicon Nanowires by Metal-Catalyzed Electroless Etching Method and Their Application in Solar Cell
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We fabricated silicon nanowires (SiNWs) using a metal-catalyzed electroless etching method, which is known to be a low-cost and simple technique. The SiNW arrays with a length of 540 nm were used as a substrate of SiNWs/PEDOT:PSS hybrid solar cell. Furthermore, gold nanoparticles (AuNPs) were used to improve the light absorption of the device due to localized surface plasmon excitation. The results show that the short-circuit current density and the power conversion efficiency increased from 22.1 mA/cm2 to 26.0 mA/cm2 and 6.91% to 8.56%, respectively. The advantage of a higher interface area between the organic and inorganic semiconductors was established by using SiNW arrays and higher absorption light incorporated with AuNPs for improving the performance of the developed solar cell.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E104-C No.6 pp.180-183
- Publication Date
- 2021/06/01
- Publicized
- 2020/12/08
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2020OMS0008
- Type of Manuscript
- BRIEF PAPER
- Category
Authors
Naraphorn TUNGHATHAITHIP
Niigata University,Chulalongkorn University
Chutiparn LERTVACHIRAPAIBOON
Niigata University
Kazunari SHINBO
Niigata University
Keizo KATO
Niigata University
Sukkaneste TUNGASMITA
Chulalongkorn University
Akira BABA
Niigata University
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Naraphorn TUNGHATHAITHIP, Chutiparn LERTVACHIRAPAIBOON, Kazunari SHINBO, Keizo KATO, Sukkaneste TUNGASMITA, Akira BABA, "Fabrication of Silicon Nanowires by Metal-Catalyzed Electroless Etching Method and Their Application in Solar Cell" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 6, pp. 180-183, June 2021, doi: 10.1587/transele.2020OMS0008.
Abstract: We fabricated silicon nanowires (SiNWs) using a metal-catalyzed electroless etching method, which is known to be a low-cost and simple technique. The SiNW arrays with a length of 540 nm were used as a substrate of SiNWs/PEDOT:PSS hybrid solar cell. Furthermore, gold nanoparticles (AuNPs) were used to improve the light absorption of the device due to localized surface plasmon excitation. The results show that the short-circuit current density and the power conversion efficiency increased from 22.1 mA/cm2 to 26.0 mA/cm2 and 6.91% to 8.56%, respectively. The advantage of a higher interface area between the organic and inorganic semiconductors was established by using SiNW arrays and higher absorption light incorporated with AuNPs for improving the performance of the developed solar cell.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2020OMS0008/_p
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@ARTICLE{e104-c_6_180,
author={Naraphorn TUNGHATHAITHIP, Chutiparn LERTVACHIRAPAIBOON, Kazunari SHINBO, Keizo KATO, Sukkaneste TUNGASMITA, Akira BABA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of Silicon Nanowires by Metal-Catalyzed Electroless Etching Method and Their Application in Solar Cell},
year={2021},
volume={E104-C},
number={6},
pages={180-183},
abstract={We fabricated silicon nanowires (SiNWs) using a metal-catalyzed electroless etching method, which is known to be a low-cost and simple technique. The SiNW arrays with a length of 540 nm were used as a substrate of SiNWs/PEDOT:PSS hybrid solar cell. Furthermore, gold nanoparticles (AuNPs) were used to improve the light absorption of the device due to localized surface plasmon excitation. The results show that the short-circuit current density and the power conversion efficiency increased from 22.1 mA/cm2 to 26.0 mA/cm2 and 6.91% to 8.56%, respectively. The advantage of a higher interface area between the organic and inorganic semiconductors was established by using SiNW arrays and higher absorption light incorporated with AuNPs for improving the performance of the developed solar cell.},
keywords={},
doi={10.1587/transele.2020OMS0008},
ISSN={1745-1353},
month={June},}
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TY - JOUR
TI - Fabrication of Silicon Nanowires by Metal-Catalyzed Electroless Etching Method and Their Application in Solar Cell
T2 - IEICE TRANSACTIONS on Electronics
SP - 180
EP - 183
AU - Naraphorn TUNGHATHAITHIP
AU - Chutiparn LERTVACHIRAPAIBOON
AU - Kazunari SHINBO
AU - Keizo KATO
AU - Sukkaneste TUNGASMITA
AU - Akira BABA
PY - 2021
DO - 10.1587/transele.2020OMS0008
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2021
AB - We fabricated silicon nanowires (SiNWs) using a metal-catalyzed electroless etching method, which is known to be a low-cost and simple technique. The SiNW arrays with a length of 540 nm were used as a substrate of SiNWs/PEDOT:PSS hybrid solar cell. Furthermore, gold nanoparticles (AuNPs) were used to improve the light absorption of the device due to localized surface plasmon excitation. The results show that the short-circuit current density and the power conversion efficiency increased from 22.1 mA/cm2 to 26.0 mA/cm2 and 6.91% to 8.56%, respectively. The advantage of a higher interface area between the organic and inorganic semiconductors was established by using SiNW arrays and higher absorption light incorporated with AuNPs for improving the performance of the developed solar cell.
ER -
English
