IEICE TRANSACTIONS on Electronics
Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA
Summary :
Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E105-C No.11 pp.704-711
- Publication Date
- 2022/11/01
- Publicized
- 2022/04/18
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2021ECP5061
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Dongyue JIN
Beijing University of Technology
Luming CAO
Beijing University of Technology
You WANG
Faulty of Hefei Innovation Research Institute, Beihang University
Xiaoxue JIA
Beijing University of Technology
Yongan PAN
Beijing University of Technology
Yuxin ZHOU
Beijing University of Technology
Xin LEI
Beijing University of Technology
Yuanyuan LIU
Beijing University of Technology
Yingqi YANG
Beijing University of Technology
Wanrong ZHANG
Beijing University of Technology
Keyword
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Dongyue JIN, Luming CAO, You WANG, Xiaoxue JIA, Yongan PAN, Yuxin ZHOU, Xin LEI, Yuanyuan LIU, Yingqi YANG, Wanrong ZHANG, "Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 11, pp. 704-711, November 2022, doi: 10.1587/transele.2021ECP5061.
Abstract: Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5061/_p
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@ARTICLE{e105-c_11_704,
author={Dongyue JIN, Luming CAO, You WANG, Xiaoxue JIA, Yongan PAN, Yuxin ZHOU, Xin LEI, Yuanyuan LIU, Yingqi YANG, Wanrong ZHANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA},
year={2022},
volume={E105-C},
number={11},
pages={704-711},
abstract={Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).},
keywords={},
doi={10.1587/transele.2021ECP5061},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA
T2 - IEICE TRANSACTIONS on Electronics
SP - 704
EP - 711
AU - Dongyue JIN
AU - Luming CAO
AU - You WANG
AU - Xiaoxue JIA
AU - Yongan PAN
AU - Yuxin ZHOU
AU - Xin LEI
AU - Yuanyuan LIU
AU - Yingqi YANG
AU - Wanrong ZHANG
PY - 2022
DO - 10.1587/transele.2021ECP5061
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2022
AB - Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).
ER -
English
