Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films

Sheikh Rashel Al AHMED; Kiyoteru KOBAYASHI

doi:10.1587/transele.E100.C.662

Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films

Sheikh Rashel Al AHMED, Kiyoteru KOBAYASHI

Full Text Views

0

Cite this

Summary :

The electron retention characteristics of memory capacitors with blocking oxide-silicon carbonitride (SiCN)-tunnel oxide stacked films were investigated for application in embedded charge trapping nonvolatile memories (NVMs). Long-term data retention in the SiCN memory capacitors was estimated to be more than 10 years at 85 °C. We presented an improved method to analyze the energy distribution of electron trap states numerically. Using the presented analytical method, electron trap states in the SiCN film were revealed to be distributed from 0.8 to 1.3 eV below the conduction band edge in the SiCN band gap. The presence of energetically deep trap states leads us to suggest that the SiCN dielectric films can be employed as the charge trapping film of embedded NVMs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E100-C No.7 pp.662-668

Publication Date: 2017/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E100.C.662

Type of Manuscript: PAPER

Category: Electronic Materials

Cite this

Copy

Sheikh Rashel Al AHMED, Kiyoteru KOBAYASHI, "Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films" in IEICE TRANSACTIONS on Electronics, vol. E100-C, no. 7, pp. 662-668, July 2017, doi: 10.1587/transele.E100.C.662.
Abstract: The electron retention characteristics of memory capacitors with blocking oxide-silicon carbonitride (SiCN)-tunnel oxide stacked films were investigated for application in embedded charge trapping nonvolatile memories (NVMs). Long-term data retention in the SiCN memory capacitors was estimated to be more than 10 years at 85 °C. We presented an improved method to analyze the energy distribution of electron trap states numerically. Using the presented analytical method, electron trap states in the SiCN film were revealed to be distributed from 0.8 to 1.3 eV below the conduction band edge in the SiCN band gap. The presence of energetically deep trap states leads us to suggest that the SiCN dielectric films can be employed as the charge trapping film of embedded NVMs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.662/_p

Copy

@ARTICLE{e100-c_7_662,
author={Sheikh Rashel Al AHMED, Kiyoteru KOBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films},
year={2017},
volume={E100-C},
number={7},
pages={662-668},
abstract={The electron retention characteristics of memory capacitors with blocking oxide-silicon carbonitride (SiCN)-tunnel oxide stacked films were investigated for application in embedded charge trapping nonvolatile memories (NVMs). Long-term data retention in the SiCN memory capacitors was estimated to be more than 10 years at 85 °C. We presented an improved method to analyze the energy distribution of electron trap states numerically. Using the presented analytical method, electron trap states in the SiCN film were revealed to be distributed from 0.8 to 1.3 eV below the conduction band edge in the SiCN band gap. The presence of energetically deep trap states leads us to suggest that the SiCN dielectric films can be employed as the charge trapping film of embedded NVMs.},
keywords={},
doi={10.1587/transele.E100.C.662},
ISSN={1745-1353},
month={July},}

Copy

TY - JOUR
TI - Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 662
EP - 668
AU - Sheikh Rashel Al AHMED
AU - Kiyoteru KOBAYASHI
PY - 2017
DO - 10.1587/transele.E100.C.662
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2017
AB - The electron retention characteristics of memory capacitors with blocking oxide-silicon carbonitride (SiCN)-tunnel oxide stacked films were investigated for application in embedded charge trapping nonvolatile memories (NVMs). Long-term data retention in the SiCN memory capacitors was estimated to be more than 10 years at 85 °C. We presented an improved method to analyze the energy distribution of electron trap states numerically. Using the presented analytical method, electron trap states in the SiCN film were revealed to be distributed from 0.8 to 1.3 eV below the conduction band edge in the SiCN band gap. The presence of energetically deep trap states leads us to suggest that the SiCN dielectric films can be employed as the charge trapping film of embedded NVMs.
ER -