Optical and Morphological Properties of Spin-Coated Triple Layer Anti-Reflection Films on Textured Silicon Substrates
Summary :
To prepare antireflection coating (ARC) by wet process is important technology for low cost fabrication of solar cells. In this research, we consider the optical reflectance of a three layer stack structure of ARC films on the pyramidally textured single-crystalline silicon substrates. Each layer of the ARC films is deposited by a spin-coating method. The triple layers consist of SiO2, SiO2-TiO2 mixture, and TiO2 films from air to the silicon substrate in that order, and the refractive index is slightly increased from air to the substrate. Light reflection can be reduced further mainly due to graded index effect. The optimized three layer structure ARC shows that the reflectance is below 0.048 at the wavelength of 600 nm.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.4 pp.299-302
- Publication Date
- 2018/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.299
- Type of Manuscript
- BRIEF PAPER
- Category
- Electronic Materials
Authors
Ryosuke WATANABE
Seikei University,Hirosaki University
Takehiro MARIKO
Seikei University
Yoji SAITO
Seikei University
Keyword
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Ryosuke WATANABE, Takehiro MARIKO, Yoji SAITO, "Optical and Morphological Properties of Spin-Coated Triple Layer Anti-Reflection Films on Textured Silicon Substrates" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 4, pp. 299-302, April 2018, doi: 10.1587/transele.E101.C.299.
Abstract: To prepare antireflection coating (ARC) by wet process is important technology for low cost fabrication of solar cells. In this research, we consider the optical reflectance of a three layer stack structure of ARC films on the pyramidally textured single-crystalline silicon substrates. Each layer of the ARC films is deposited by a spin-coating method. The triple layers consist of SiO2, SiO2-TiO2 mixture, and TiO2 films from air to the silicon substrate in that order, and the refractive index is slightly increased from air to the substrate. Light reflection can be reduced further mainly due to graded index effect. The optimized three layer structure ARC shows that the reflectance is below 0.048 at the wavelength of 600 nm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.299/_p
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@ARTICLE{e101-c_4_299,
author={Ryosuke WATANABE, Takehiro MARIKO, Yoji SAITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Optical and Morphological Properties of Spin-Coated Triple Layer Anti-Reflection Films on Textured Silicon Substrates},
year={2018},
volume={E101-C},
number={4},
pages={299-302},
abstract={To prepare antireflection coating (ARC) by wet process is important technology for low cost fabrication of solar cells. In this research, we consider the optical reflectance of a three layer stack structure of ARC films on the pyramidally textured single-crystalline silicon substrates. Each layer of the ARC films is deposited by a spin-coating method. The triple layers consist of SiO2, SiO2-TiO2 mixture, and TiO2 films from air to the silicon substrate in that order, and the refractive index is slightly increased from air to the substrate. Light reflection can be reduced further mainly due to graded index effect. The optimized three layer structure ARC shows that the reflectance is below 0.048 at the wavelength of 600 nm.},
keywords={},
doi={10.1587/transele.E101.C.299},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - Optical and Morphological Properties of Spin-Coated Triple Layer Anti-Reflection Films on Textured Silicon Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 299
EP - 302
AU - Ryosuke WATANABE
AU - Takehiro MARIKO
AU - Yoji SAITO
PY - 2018
DO - 10.1587/transele.E101.C.299
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2018
AB - To prepare antireflection coating (ARC) by wet process is important technology for low cost fabrication of solar cells. In this research, we consider the optical reflectance of a three layer stack structure of ARC films on the pyramidally textured single-crystalline silicon substrates. Each layer of the ARC films is deposited by a spin-coating method. The triple layers consist of SiO2, SiO2-TiO2 mixture, and TiO2 films from air to the silicon substrate in that order, and the refractive index is slightly increased from air to the substrate. Light reflection can be reduced further mainly due to graded index effect. The optimized three layer structure ARC shows that the reflectance is below 0.048 at the wavelength of 600 nm.
ER -
English
