Room-Temperature Atomic Layer Deposition of SnO2 Using Tetramethyltin and Its Application to TFT Fabrication
Summary :
We report room-temperature atomic layer deposition (ALD) of SnO2 using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO2-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO2 surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.5 pp.317-322
- Publication Date
- 2018/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.317
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Kentaro TOKORO
Yamagata University
Shunsuke SAITO
Yamagata University
Kensaku KANOMATA
Yamagata University
Masanori MIURA
Yamagata University
Bashir AHMMAD
Yamagata University
Shigeru KUBOTA
Yamagata University
Fumihiko HIROSE
Yamagata University
Keyword
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Kentaro TOKORO, Shunsuke SAITO, Kensaku KANOMATA, Masanori MIURA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, "Room-Temperature Atomic Layer Deposition of SnO2 Using Tetramethyltin and Its Application to TFT Fabrication" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 5, pp. 317-322, May 2018, doi: 10.1587/transele.E101.C.317.
Abstract: We report room-temperature atomic layer deposition (ALD) of SnO2 using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO2-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO2 surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.317/_p
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@ARTICLE{e101-c_5_317,
author={Kentaro TOKORO, Shunsuke SAITO, Kensaku KANOMATA, Masanori MIURA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Room-Temperature Atomic Layer Deposition of SnO2 Using Tetramethyltin and Its Application to TFT Fabrication},
year={2018},
volume={E101-C},
number={5},
pages={317-322},
abstract={We report room-temperature atomic layer deposition (ALD) of SnO2 using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO2-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO2 surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.},
keywords={},
doi={10.1587/transele.E101.C.317},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Room-Temperature Atomic Layer Deposition of SnO2 Using Tetramethyltin and Its Application to TFT Fabrication
T2 - IEICE TRANSACTIONS on Electronics
SP - 317
EP - 322
AU - Kentaro TOKORO
AU - Shunsuke SAITO
AU - Kensaku KANOMATA
AU - Masanori MIURA
AU - Bashir AHMMAD
AU - Shigeru KUBOTA
AU - Fumihiko HIROSE
PY - 2018
DO - 10.1587/transele.E101.C.317
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2018
AB - We report room-temperature atomic layer deposition (ALD) of SnO2 using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO2-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO2 surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.
ER -
English
