IEICE TRANSACTIONS on Electronics
Low-Temperature Fabrication of Ion-Induced Ge Nanostructures: Effect of Simultaneous Al Supply
Summary :
Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.12 pp.1417-1420
- Publication Date
- 2009/12/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.1417
- Type of Manuscript
- Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
- Category
- Nanomaterials and Nanostructures
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Ako MIYAWAKI, Toshiaki HAYASHI, Masaki TANEMURA, Yasuhiko HAYASHI, Tomoharu TOKUNAGA, Tetsuo SOGA, "Low-Temperature Fabrication of Ion-Induced Ge Nanostructures: Effect of Simultaneous Al Supply" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1417-1420, December 2009, doi: 10.1587/transele.E92.C.1417.
Abstract: Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1417/_p
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@ARTICLE{e92-c_12_1417,
author={Ako MIYAWAKI, Toshiaki HAYASHI, Masaki TANEMURA, Yasuhiko HAYASHI, Tomoharu TOKUNAGA, Tetsuo SOGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Fabrication of Ion-Induced Ge Nanostructures: Effect of Simultaneous Al Supply},
year={2009},
volume={E92-C},
number={12},
pages={1417-1420},
abstract={Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.},
keywords={},
doi={10.1587/transele.E92.C.1417},
ISSN={1745-1353},
month={December},}
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TY - JOUR
TI - Low-Temperature Fabrication of Ion-Induced Ge Nanostructures: Effect of Simultaneous Al Supply
T2 - IEICE TRANSACTIONS on Electronics
SP - 1417
EP - 1420
AU - Ako MIYAWAKI
AU - Toshiaki HAYASHI
AU - Masaki TANEMURA
AU - Yasuhiko HAYASHI
AU - Tomoharu TOKUNAGA
AU - Tetsuo SOGA
PY - 2009
DO - 10.1587/transele.E92.C.1417
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.
ER -
English
