Observation of Stimulated Emission in Short Wavelength Band from Silica-Based Superstructure Films
Summary :
We report Ultraviolet (UV)-induced visible light luminescence in artificial-lattice thin films of ion-doped silica glass (silica superstructure thin films). The film was composed of periodic nanometer layers of germanium-doped silica (Ge:SiO2), titanium-doped silica (Ti:SiO2), and tin-doped silica (Sn:SiO2). The thickness of each layer was between 10 and 30 nm. Despite the small thickness of the film (few microns), a relatively bright luminescence of white light was observed, along with cathode-ray luminescence in the superstructure film. In addition, irradiation of the superstructure film with UV light led to light amplification by stimulated emission at 405 nm. The experimental results suggest the potential application of silica superstructure thin films as optical amplifiers.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.12 pp.1454-1459
- Publication Date
- 2009/12/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.1454
- Type of Manuscript
- Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
- Category
- Fundamentals for Nanodevices
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Takehiko UNO, Satoru NOGE, Kei KASAHARA, "Observation of Stimulated Emission in Short Wavelength Band from Silica-Based Superstructure Films" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1454-1459, December 2009, doi: 10.1587/transele.E92.C.1454.
Abstract: We report Ultraviolet (UV)-induced visible light luminescence in artificial-lattice thin films of ion-doped silica glass (silica superstructure thin films). The film was composed of periodic nanometer layers of germanium-doped silica (Ge:SiO2), titanium-doped silica (Ti:SiO2), and tin-doped silica (Sn:SiO2). The thickness of each layer was between 10 and 30 nm. Despite the small thickness of the film (few microns), a relatively bright luminescence of white light was observed, along with cathode-ray luminescence in the superstructure film. In addition, irradiation of the superstructure film with UV light led to light amplification by stimulated emission at 405 nm. The experimental results suggest the potential application of silica superstructure thin films as optical amplifiers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1454/_p
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@ARTICLE{e92-c_12_1454,
author={Takehiko UNO, Satoru NOGE, Kei KASAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Observation of Stimulated Emission in Short Wavelength Band from Silica-Based Superstructure Films},
year={2009},
volume={E92-C},
number={12},
pages={1454-1459},
abstract={We report Ultraviolet (UV)-induced visible light luminescence in artificial-lattice thin films of ion-doped silica glass (silica superstructure thin films). The film was composed of periodic nanometer layers of germanium-doped silica (Ge:SiO2), titanium-doped silica (Ti:SiO2), and tin-doped silica (Sn:SiO2). The thickness of each layer was between 10 and 30 nm. Despite the small thickness of the film (few microns), a relatively bright luminescence of white light was observed, along with cathode-ray luminescence in the superstructure film. In addition, irradiation of the superstructure film with UV light led to light amplification by stimulated emission at 405 nm. The experimental results suggest the potential application of silica superstructure thin films as optical amplifiers.},
keywords={},
doi={10.1587/transele.E92.C.1454},
ISSN={1745-1353},
month={December},}
Copy
TY - JOUR
TI - Observation of Stimulated Emission in Short Wavelength Band from Silica-Based Superstructure Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1454
EP - 1459
AU - Takehiko UNO
AU - Satoru NOGE
AU - Kei KASAHARA
PY - 2009
DO - 10.1587/transele.E92.C.1454
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - We report Ultraviolet (UV)-induced visible light luminescence in artificial-lattice thin films of ion-doped silica glass (silica superstructure thin films). The film was composed of periodic nanometer layers of germanium-doped silica (Ge:SiO2), titanium-doped silica (Ti:SiO2), and tin-doped silica (Sn:SiO2). The thickness of each layer was between 10 and 30 nm. Despite the small thickness of the film (few microns), a relatively bright luminescence of white light was observed, along with cathode-ray luminescence in the superstructure film. In addition, irradiation of the superstructure film with UV light led to light amplification by stimulated emission at 405 nm. The experimental results suggest the potential application of silica superstructure thin films as optical amplifiers.
ER -
English
