An improved nonlinear circuit model for a GaAs Gunn diode in an oscillator is proposed based on the physical mechanism of the diode. This model interprets the nonlinear harmonic character on the Gunn diode. Its equivalent nonlinear circuit of which can assist in the design of the Gunn oscillator and help in the analysis of the fundamental and harmonic characteristics of the GaAs Gunn diode. The simulation prediction and the experiment of the Gunn oscillator show the feasibility of the nonlinear circuit model for the GaAs Gunn oscillator.
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Bo ZHANG, Yong FAN, Yonghong ZHANG, "An Improved Nonlinear Circuit Model for GaAs Gunn Diode in W-Band Oscillator" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1490-1495, December 2009, doi: 10.1587/transele.E92.C.1490.
Abstract: An improved nonlinear circuit model for a GaAs Gunn diode in an oscillator is proposed based on the physical mechanism of the diode. This model interprets the nonlinear harmonic character on the Gunn diode. Its equivalent nonlinear circuit of which can assist in the design of the Gunn oscillator and help in the analysis of the fundamental and harmonic characteristics of the GaAs Gunn diode. The simulation prediction and the experiment of the Gunn oscillator show the feasibility of the nonlinear circuit model for the GaAs Gunn oscillator.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1490/_p
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@ARTICLE{e92-c_12_1490,
author={Bo ZHANG, Yong FAN, Yonghong ZHANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Improved Nonlinear Circuit Model for GaAs Gunn Diode in W-Band Oscillator},
year={2009},
volume={E92-C},
number={12},
pages={1490-1495},
abstract={An improved nonlinear circuit model for a GaAs Gunn diode in an oscillator is proposed based on the physical mechanism of the diode. This model interprets the nonlinear harmonic character on the Gunn diode. Its equivalent nonlinear circuit of which can assist in the design of the Gunn oscillator and help in the analysis of the fundamental and harmonic characteristics of the GaAs Gunn diode. The simulation prediction and the experiment of the Gunn oscillator show the feasibility of the nonlinear circuit model for the GaAs Gunn oscillator.},
keywords={},
doi={10.1587/transele.E92.C.1490},
ISSN={1745-1353},
month={December},}
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TY - JOUR
TI - An Improved Nonlinear Circuit Model for GaAs Gunn Diode in W-Band Oscillator
T2 - IEICE TRANSACTIONS on Electronics
SP - 1490
EP - 1495
AU - Bo ZHANG
AU - Yong FAN
AU - Yonghong ZHANG
PY - 2009
DO - 10.1587/transele.E92.C.1490
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - An improved nonlinear circuit model for a GaAs Gunn diode in an oscillator is proposed based on the physical mechanism of the diode. This model interprets the nonlinear harmonic character on the Gunn diode. Its equivalent nonlinear circuit of which can assist in the design of the Gunn oscillator and help in the analysis of the fundamental and harmonic characteristics of the GaAs Gunn diode. The simulation prediction and the experiment of the Gunn oscillator show the feasibility of the nonlinear circuit model for the GaAs Gunn oscillator.
ER -