IEICE TRANSACTIONS on Electronics
Residue-Free Solder Bumping Using Small AuSn Particles by Hydrogen Radicals
Summary :
An AuSn reflow process using hydrogen radicals as a way to avert the cleaning of flux residues was investigated for its application to solder bumping. AuSn particles (manufactured by a gas atomizer) smaller than 5 µm, which are difficult to reflow by conventional methods that use rosin mildly activated (RMA) flux, were used for the experiments. In this process, the reduction effect by the hydrogen radicals removes the surface oxides of the AuSn particles. Excellent wetting between 1-µm-diameter AuSn particles and Ni metallization occurred in hydrogen plasma. Using hydrogen radicals, 100 µm-diameter AuSn bumps without voids were successfully formed at a peak temperature of 300
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.2 pp.247-251
- Publication Date
- 2009/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.247
- Type of Manuscript
- Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
- Category
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Eiji HIGURASHI, Daisuke CHINO, Tadatomo SUGA, "Residue-Free Solder Bumping Using Small AuSn Particles by Hydrogen Radicals" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 2, pp. 247-251, February 2009, doi: 10.1587/transele.E92.C.247.
Abstract: An AuSn reflow process using hydrogen radicals as a way to avert the cleaning of flux residues was investigated for its application to solder bumping. AuSn particles (manufactured by a gas atomizer) smaller than 5 µm, which are difficult to reflow by conventional methods that use rosin mildly activated (RMA) flux, were used for the experiments. In this process, the reduction effect by the hydrogen radicals removes the surface oxides of the AuSn particles. Excellent wetting between 1-µm-diameter AuSn particles and Ni metallization occurred in hydrogen plasma. Using hydrogen radicals, 100 µm-diameter AuSn bumps without voids were successfully formed at a peak temperature of 300
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.247/_p
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@ARTICLE{e92-c_2_247,
author={Eiji HIGURASHI, Daisuke CHINO, Tadatomo SUGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Residue-Free Solder Bumping Using Small AuSn Particles by Hydrogen Radicals},
year={2009},
volume={E92-C},
number={2},
pages={247-251},
abstract={An AuSn reflow process using hydrogen radicals as a way to avert the cleaning of flux residues was investigated for its application to solder bumping. AuSn particles (manufactured by a gas atomizer) smaller than 5 µm, which are difficult to reflow by conventional methods that use rosin mildly activated (RMA) flux, were used for the experiments. In this process, the reduction effect by the hydrogen radicals removes the surface oxides of the AuSn particles. Excellent wetting between 1-µm-diameter AuSn particles and Ni metallization occurred in hydrogen plasma. Using hydrogen radicals, 100 µm-diameter AuSn bumps without voids were successfully formed at a peak temperature of 300
keywords={},
doi={10.1587/transele.E92.C.247},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Residue-Free Solder Bumping Using Small AuSn Particles by Hydrogen Radicals
T2 - IEICE TRANSACTIONS on Electronics
SP - 247
EP - 251
AU - Eiji HIGURASHI
AU - Daisuke CHINO
AU - Tadatomo SUGA
PY - 2009
DO - 10.1587/transele.E92.C.247
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2009
AB - An AuSn reflow process using hydrogen radicals as a way to avert the cleaning of flux residues was investigated for its application to solder bumping. AuSn particles (manufactured by a gas atomizer) smaller than 5 µm, which are difficult to reflow by conventional methods that use rosin mildly activated (RMA) flux, were used for the experiments. In this process, the reduction effect by the hydrogen radicals removes the surface oxides of the AuSn particles. Excellent wetting between 1-µm-diameter AuSn particles and Ni metallization occurred in hydrogen plasma. Using hydrogen radicals, 100 µm-diameter AuSn bumps without voids were successfully formed at a peak temperature of 300
ER -
English
