Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz
Summary :
This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equivalent to 2 GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors' knowledge, this is the first time 2 GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.8 pp.1238-1244
- Publication Date
- 2010/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.1238
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
- Category
- GaN-based Devices
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Keyword
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Stephan MAROLDT, Dirk WIEGNER, Stanislav VITANOV, Vassil PALANKOVSKI, Rudiger QUAY, Oliver AMBACHER, "Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1238-1244, August 2010, doi: 10.1587/transele.E93.C.1238.
Abstract: This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equivalent to 2 GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors' knowledge, this is the first time 2 GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1238/_p
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@ARTICLE{e93-c_8_1238,
author={Stephan MAROLDT, Dirk WIEGNER, Stanislav VITANOV, Vassil PALANKOVSKI, Rudiger QUAY, Oliver AMBACHER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz},
year={2010},
volume={E93-C},
number={8},
pages={1238-1244},
abstract={This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equivalent to 2 GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors' knowledge, this is the first time 2 GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.},
keywords={},
doi={10.1587/transele.E93.C.1238},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz
T2 - IEICE TRANSACTIONS on Electronics
SP - 1238
EP - 1244
AU - Stephan MAROLDT
AU - Dirk WIEGNER
AU - Stanislav VITANOV
AU - Vassil PALANKOVSKI
AU - Rudiger QUAY
AU - Oliver AMBACHER
PY - 2010
DO - 10.1587/transele.E93.C.1238
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equivalent to 2 GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors' knowledge, this is the first time 2 GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.
ER -
English
