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Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz

Stephan MAROLDT, Dirk WIEGNER, Stanislav VITANOV, Vassil PALANKOVSKI, Rudiger QUAY, Oliver AMBACHER

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Summary :

This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equivalent to 2 GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors' knowledge, this is the first time 2 GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.

Publication
IEICE TRANSACTIONS on Electronics Vol.E93-C No.8 pp.1238-1244
Publication Date
2010/08/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.E93.C.1238
Type of Manuscript
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category
GaN-based Devices

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