Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer
Summary :
We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area is increased and tunneling barrier width is decreased. Also, electric field induced by gate bias is increased by the surrounding gate structure, which makes it possible to obtain a more abrupt band-bending. These effects bring about a significant improvement in on-current and subthreshold characteristics. GAA TFET with n-doped layer shows subthreshold swing at Id = 1 nA/µm of 32.5 mV/dec, average subthreshold swing of 20.6 mV/dec. With comparison to other TFET structures, the merits of the proposed device are demonstrated and performance dependences on device parameters are characterized by extensive simulations.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.540-545
- Publication Date
- 2010/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.540
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
- Multi-Gate Technology
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Dong Seup LEE, Hong-Seon YANG, Kwon-Chil KANG, Joung-Eob LEE, Jung Han LEE, Seongjae CHO, Byung-Gook PARK, "Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 540-545, May 2010, doi: 10.1587/transele.E93.C.540.
Abstract: We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area is increased and tunneling barrier width is decreased. Also, electric field induced by gate bias is increased by the surrounding gate structure, which makes it possible to obtain a more abrupt band-bending. These effects bring about a significant improvement in on-current and subthreshold characteristics. GAA TFET with n-doped layer shows subthreshold swing at Id = 1 nA/µm of 32.5 mV/dec, average subthreshold swing of 20.6 mV/dec. With comparison to other TFET structures, the merits of the proposed device are demonstrated and performance dependences on device parameters are characterized by extensive simulations.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.540/_p
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@ARTICLE{e93-c_5_540,
author={Dong Seup LEE, Hong-Seon YANG, Kwon-Chil KANG, Joung-Eob LEE, Jung Han LEE, Seongjae CHO, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer},
year={2010},
volume={E93-C},
number={5},
pages={540-545},
abstract={We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area is increased and tunneling barrier width is decreased. Also, electric field induced by gate bias is increased by the surrounding gate structure, which makes it possible to obtain a more abrupt band-bending. These effects bring about a significant improvement in on-current and subthreshold characteristics. GAA TFET with n-doped layer shows subthreshold swing at Id = 1 nA/µm of 32.5 mV/dec, average subthreshold swing of 20.6 mV/dec. With comparison to other TFET structures, the merits of the proposed device are demonstrated and performance dependences on device parameters are characterized by extensive simulations.},
keywords={},
doi={10.1587/transele.E93.C.540},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 540
EP - 545
AU - Dong Seup LEE
AU - Hong-Seon YANG
AU - Kwon-Chil KANG
AU - Joung-Eob LEE
AU - Jung Han LEE
AU - Seongjae CHO
AU - Byung-Gook PARK
PY - 2010
DO - 10.1587/transele.E93.C.540
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area is increased and tunneling barrier width is decreased. Also, electric field induced by gate bias is increased by the surrounding gate structure, which makes it possible to obtain a more abrupt band-bending. These effects bring about a significant improvement in on-current and subthreshold characteristics. GAA TFET with n-doped layer shows subthreshold swing at Id = 1 nA/µm of 32.5 mV/dec, average subthreshold swing of 20.6 mV/dec. With comparison to other TFET structures, the merits of the proposed device are demonstrated and performance dependences on device parameters are characterized by extensive simulations.
ER -
English
