IEICE TRANSACTIONS on Electronics
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
Summary :
We have studied the transport property of the Vertical MOSFET (V-MOSFET) with an impurity from the viewpoint of quantum electron dynamics. In order to obtain the position dependence of impurity for the electron transmission property through the channel of the V-MOSFET, we solve the time-dependent Shrodinger equation in real space mesh technique We reveal that the impurity in the source edge can assist the electron transmission from the source to drain working as a wave splitter. In addition, we also reveal the effect of an impurity in the surface of pillar is limited because of its dimensionality. Furthermore, we obtained that the electron injection from the source to the channel becomes difficult due to the energy difference between the subbands of the source and the channel. These results enable us to obtain the guiding principle to design the V-MOSFET in the 10 nm pillar. The results enable us to obtain the guiding principle to design the V-MOSFET beyond 20 nm design rule.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.737-742
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.737
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Masakazu MURAGUCHI, Tetsuo ENDOH, "Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 737-742, May 2011, doi: 10.1587/transele.E94.C.737.
Abstract: We have studied the transport property of the Vertical MOSFET (V-MOSFET) with an impurity from the viewpoint of quantum electron dynamics. In order to obtain the position dependence of impurity for the electron transmission property through the channel of the V-MOSFET, we solve the time-dependent Shrodinger equation in real space mesh technique We reveal that the impurity in the source edge can assist the electron transmission from the source to drain working as a wave splitter. In addition, we also reveal the effect of an impurity in the surface of pillar is limited because of its dimensionality. Furthermore, we obtained that the electron injection from the source to the channel becomes difficult due to the energy difference between the subbands of the source and the channel. These results enable us to obtain the guiding principle to design the V-MOSFET in the 10 nm pillar. The results enable us to obtain the guiding principle to design the V-MOSFET beyond 20 nm design rule.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.737/_p
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@ARTICLE{e94-c_5_737,
author={Masakazu MURAGUCHI, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET},
year={2011},
volume={E94-C},
number={5},
pages={737-742},
abstract={We have studied the transport property of the Vertical MOSFET (V-MOSFET) with an impurity from the viewpoint of quantum electron dynamics. In order to obtain the position dependence of impurity for the electron transmission property through the channel of the V-MOSFET, we solve the time-dependent Shrodinger equation in real space mesh technique We reveal that the impurity in the source edge can assist the electron transmission from the source to drain working as a wave splitter. In addition, we also reveal the effect of an impurity in the surface of pillar is limited because of its dimensionality. Furthermore, we obtained that the electron injection from the source to the channel becomes difficult due to the energy difference between the subbands of the source and the channel. These results enable us to obtain the guiding principle to design the V-MOSFET in the 10 nm pillar. The results enable us to obtain the guiding principle to design the V-MOSFET beyond 20 nm design rule.},
keywords={},
doi={10.1587/transele.E94.C.737},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 737
EP - 742
AU - Masakazu MURAGUCHI
AU - Tetsuo ENDOH
PY - 2011
DO - 10.1587/transele.E94.C.737
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - We have studied the transport property of the Vertical MOSFET (V-MOSFET) with an impurity from the viewpoint of quantum electron dynamics. In order to obtain the position dependence of impurity for the electron transmission property through the channel of the V-MOSFET, we solve the time-dependent Shrodinger equation in real space mesh technique We reveal that the impurity in the source edge can assist the electron transmission from the source to drain working as a wave splitter. In addition, we also reveal the effect of an impurity in the surface of pillar is limited because of its dimensionality. Furthermore, we obtained that the electron injection from the source to the channel becomes difficult due to the energy difference between the subbands of the source and the channel. These results enable us to obtain the guiding principle to design the V-MOSFET in the 10 nm pillar. The results enable us to obtain the guiding principle to design the V-MOSFET beyond 20 nm design rule.
ER -
English
