IEICE TRANSACTIONS on Electronics
Modulation of PtSi Work Function by Alloying with Low Work Function Metal
Summary :
In order to reduce PtSi Schottky barrier height (SBH) for electron, we investigated modulation of PtSi work function by alloying with low work function metal, such as Hf (3.9 eV) and Yb (2.7 eV). Pt (10-20 nm)/Hf, Yb (0-10 nm)/n-Si(100) stacked structures were in-situ deposited at room temperature by RF magnetron sputtering method. In case of PtxHf1 - xSi formed at 400
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.775-779
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.775
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Jun GAO, Jumpei ISHIKAWA, Shun-ichiro OHMI, "Modulation of PtSi Work Function by Alloying with Low Work Function Metal" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 775-779, May 2011, doi: 10.1587/transele.E94.C.775.
Abstract: In order to reduce PtSi Schottky barrier height (SBH) for electron, we investigated modulation of PtSi work function by alloying with low work function metal, such as Hf (3.9 eV) and Yb (2.7 eV). Pt (10-20 nm)/Hf, Yb (0-10 nm)/n-Si(100) stacked structures were in-situ deposited at room temperature by RF magnetron sputtering method. In case of PtxHf1 - xSi formed at 400
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.775/_p
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@ARTICLE{e94-c_5_775,
author={Jun GAO, Jumpei ISHIKAWA, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modulation of PtSi Work Function by Alloying with Low Work Function Metal},
year={2011},
volume={E94-C},
number={5},
pages={775-779},
abstract={In order to reduce PtSi Schottky barrier height (SBH) for electron, we investigated modulation of PtSi work function by alloying with low work function metal, such as Hf (3.9 eV) and Yb (2.7 eV). Pt (10-20 nm)/Hf, Yb (0-10 nm)/n-Si(100) stacked structures were in-situ deposited at room temperature by RF magnetron sputtering method. In case of PtxHf1 - xSi formed at 400
keywords={},
doi={10.1587/transele.E94.C.775},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Modulation of PtSi Work Function by Alloying with Low Work Function Metal
T2 - IEICE TRANSACTIONS on Electronics
SP - 775
EP - 779
AU - Jun GAO
AU - Jumpei ISHIKAWA
AU - Shun-ichiro OHMI
PY - 2011
DO - 10.1587/transele.E94.C.775
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - In order to reduce PtSi Schottky barrier height (SBH) for electron, we investigated modulation of PtSi work function by alloying with low work function metal, such as Hf (3.9 eV) and Yb (2.7 eV). Pt (10-20 nm)/Hf, Yb (0-10 nm)/n-Si(100) stacked structures were in-situ deposited at room temperature by RF magnetron sputtering method. In case of PtxHf1 - xSi formed at 400
ER -
English
