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Integration of Silicon Nano-Photonic Devices for Telecommunications
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Monolithic integration of various kinds of optical components on a silicon wafer is the key to making silicon (Si) photonics practical technology. Applying silicon photonics to telecommunications further requires low insertion loss and polarization independence. We propose an integration concept for telecommunications based on Si and related materials and demonstrate monolithic integration of passive and dynamic functional components. This article shows the great potential of Si photonics technology for telecommunications.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.2 pp.199-205
- Publication Date
- 2012/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.199
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Photonic Devices using Nanofabrication Technology and Their Applications)
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Seiichi ITABASHI, Hidetaka NISHI, Tai TSUCHIZAWA, Toshifumi WATANABE, Hiroyuki SHINOJIMA, Rai KOU, Koji YAMADA, "Integration of Silicon Nano-Photonic Devices for Telecommunications" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 2, pp. 199-205, February 2012, doi: 10.1587/transele.E95.C.199.
Abstract: Monolithic integration of various kinds of optical components on a silicon wafer is the key to making silicon (Si) photonics practical technology. Applying silicon photonics to telecommunications further requires low insertion loss and polarization independence. We propose an integration concept for telecommunications based on Si and related materials and demonstrate monolithic integration of passive and dynamic functional components. This article shows the great potential of Si photonics technology for telecommunications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.199/_p
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@ARTICLE{e95-c_2_199,
author={Seiichi ITABASHI, Hidetaka NISHI, Tai TSUCHIZAWA, Toshifumi WATANABE, Hiroyuki SHINOJIMA, Rai KOU, Koji YAMADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Integration of Silicon Nano-Photonic Devices for Telecommunications},
year={2012},
volume={E95-C},
number={2},
pages={199-205},
abstract={Monolithic integration of various kinds of optical components on a silicon wafer is the key to making silicon (Si) photonics practical technology. Applying silicon photonics to telecommunications further requires low insertion loss and polarization independence. We propose an integration concept for telecommunications based on Si and related materials and demonstrate monolithic integration of passive and dynamic functional components. This article shows the great potential of Si photonics technology for telecommunications.},
keywords={},
doi={10.1587/transele.E95.C.199},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Integration of Silicon Nano-Photonic Devices for Telecommunications
T2 - IEICE TRANSACTIONS on Electronics
SP - 199
EP - 205
AU - Seiichi ITABASHI
AU - Hidetaka NISHI
AU - Tai TSUCHIZAWA
AU - Toshifumi WATANABE
AU - Hiroyuki SHINOJIMA
AU - Rai KOU
AU - Koji YAMADA
PY - 2012
DO - 10.1587/transele.E95.C.199
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2012
AB - Monolithic integration of various kinds of optical components on a silicon wafer is the key to making silicon (Si) photonics practical technology. Applying silicon photonics to telecommunications further requires low insertion loss and polarization independence. We propose an integration concept for telecommunications based on Si and related materials and demonstrate monolithic integration of passive and dynamic functional components. This article shows the great potential of Si photonics technology for telecommunications.
ER -
English
