We estimated the transit time of GaInAs/AlAs double-barrier resonant tunneling diodes (RTDs) oscillating at 0.6–1 THz. The RTDs have graded emitter structures and thin barriers, and are integrated with planar slot antennas for the oscillation. The transit time across the collector depletion region was estimated from measured results of the dependence of oscillation frequency on RTD mesa area. The estimated transit time was slightly reduced with the introduction of the graded emitter, probably due to reduction of the electron transition between Γ and L bands resulted from the low electric field in the collector depletion region.
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Atsushi TERANISHI, Safumi SUZUKI, Kaoru SHIZUNO, Masahiro ASADA, Hiroki SUGIYAMA, Haruki YOKOYAMA, "Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 3, pp. 401-407, March 2012, doi: 10.1587/transele.E95.C.401.
Abstract: We estimated the transit time of GaInAs/AlAs double-barrier resonant tunneling diodes (RTDs) oscillating at 0.6–1 THz. The RTDs have graded emitter structures and thin barriers, and are integrated with planar slot antennas for the oscillation. The transit time across the collector depletion region was estimated from measured results of the dependence of oscillation frequency on RTD mesa area. The estimated transit time was slightly reduced with the introduction of the graded emitter, probably due to reduction of the electron transition between Γ and L bands resulted from the low electric field in the collector depletion region.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.401/_p
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@ARTICLE{e95-c_3_401,
author={Atsushi TERANISHI, Safumi SUZUKI, Kaoru SHIZUNO, Masahiro ASADA, Hiroki SUGIYAMA, Haruki YOKOYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers},
year={2012},
volume={E95-C},
number={3},
pages={401-407},
abstract={We estimated the transit time of GaInAs/AlAs double-barrier resonant tunneling diodes (RTDs) oscillating at 0.6–1 THz. The RTDs have graded emitter structures and thin barriers, and are integrated with planar slot antennas for the oscillation. The transit time across the collector depletion region was estimated from measured results of the dependence of oscillation frequency on RTD mesa area. The estimated transit time was slightly reduced with the introduction of the graded emitter, probably due to reduction of the electron transition between Γ and L bands resulted from the low electric field in the collector depletion region.},
keywords={},
doi={10.1587/transele.E95.C.401},
ISSN={1745-1353},
month={March},}
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TY - JOUR
TI - Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
T2 - IEICE TRANSACTIONS on Electronics
SP - 401
EP - 407
AU - Atsushi TERANISHI
AU - Safumi SUZUKI
AU - Kaoru SHIZUNO
AU - Masahiro ASADA
AU - Hiroki SUGIYAMA
AU - Haruki YOKOYAMA
PY - 2012
DO - 10.1587/transele.E95.C.401
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2012
AB - We estimated the transit time of GaInAs/AlAs double-barrier resonant tunneling diodes (RTDs) oscillating at 0.6–1 THz. The RTDs have graded emitter structures and thin barriers, and are integrated with planar slot antennas for the oscillation. The transit time across the collector depletion region was estimated from measured results of the dependence of oscillation frequency on RTD mesa area. The estimated transit time was slightly reduced with the introduction of the graded emitter, probably due to reduction of the electron transition between Γ and L bands resulted from the low electric field in the collector depletion region.
ER -