Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters

Masaru ZAITSU; Takuo TANEMURA; Yoshiaki NAKANO

doi:10.1587/transele.E97.C.731

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Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters

Masaru ZAITSU, Takuo TANEMURA, Yoshiaki NAKANO

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Summary :

Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90% is achieved with the broad range of the waveguide width from 705 to 915 nm, corresponding to a factor-of-two or larger improvement in the fabrication tolerance compared with that of the conventional polarization converters. Finally we present a simple fabrication procedure of this newly proposed structure, where the thickness of the residual InGaAsP layer is controlled precisely by using a thin etch-stop layer.

Publication: IEICE TRANSACTIONS on Electronics Vol.E97-C No.7 pp.731-735

Publication Date: 2014/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E97.C.731

Type of Manuscript: Special Section INVITED PAPER (Special Section on Opto-electronics and Communications for Future Optical Network)

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Authors

Masaru ZAITSU
  The University of Tokyo
Takuo TANEMURA
  The University of Tokyo
Yoshiaki NAKANO
  The University of Tokyo

Keyword

Polarization converters, fabrication tolerances, monolithic integration, polarization-multiplexing, photonic integrated circuits

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Masaru ZAITSU, Takuo TANEMURA, Yoshiaki NAKANO, "Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters" in IEICE TRANSACTIONS on Electronics, vol. E97-C, no. 7, pp. 731-735, July 2014, doi: 10.1587/transele.E97.C.731.
Abstract: Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90% is achieved with the broad range of the waveguide width from 705 to 915 nm, corresponding to a factor-of-two or larger improvement in the fabrication tolerance compared with that of the conventional polarization converters. Finally we present a simple fabrication procedure of this newly proposed structure, where the thickness of the residual InGaAsP layer is controlled precisely by using a thin etch-stop layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.731/_p

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@ARTICLE{e97-c_7_731,
author={Masaru ZAITSU, Takuo TANEMURA, Yoshiaki NAKANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters},
year={2014},
volume={E97-C},
number={7},
pages={731-735},
abstract={Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90% is achieved with the broad range of the waveguide width from 705 to 915 nm, corresponding to a factor-of-two or larger improvement in the fabrication tolerance compared with that of the conventional polarization converters. Finally we present a simple fabrication procedure of this newly proposed structure, where the thickness of the residual InGaAsP layer is controlled precisely by using a thin etch-stop layer.},
keywords={},
doi={10.1587/transele.E97.C.731},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters
T2 - IEICE TRANSACTIONS on Electronics
SP - 731
EP - 735
AU - Masaru ZAITSU
AU - Takuo TANEMURA
AU - Yoshiaki NAKANO
PY - 2014
DO - 10.1587/transele.E97.C.731
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2014
AB - Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90% is achieved with the broad range of the waveguide width from 705 to 915 nm, corresponding to a factor-of-two or larger improvement in the fabrication tolerance compared with that of the conventional polarization converters. Finally we present a simple fabrication procedure of this newly proposed structure, where the thickness of the residual InGaAsP layer is controlled precisely by using a thin etch-stop layer.
ER -