A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics

Sohya KUDOH; Shun-ichiro OHMI

doi:10.1587/transele.E98.C.402

A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics

Sohya KUDOH, Shun-ichiro OHMI

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In this study, Si(100) surface flattening process was investigated utilizing sacrificial oxidation method to improve Metal–Insulator–Semiconductor (MIS) diode characteristics. By etching of the 100 nm-thick sacrificial oxide formed by thermal oxidation at 1100°C, the surface roughness of Si substrate was reduced. The obtained Root-Mean-Square (RMS) roughness was decreased from 0.15 nm (as-cleaned) to 0.07 nm in the case of sacrificial oxide formed by wet oxidation, while it was 0.10 nm in the case of dry oxidation. Furthermore, time-dependent dielectric breakdown (TDDB) characteristic of Al/SiO₂(10 nm)/p-Si(100) MIS diode structures was found to be improved by the reduction of Si surface RMS roughness.

Publication: IEICE TRANSACTIONS on Electronics Vol.E98-C No.5 pp.402-405

Publication Date: 2015/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E98.C.402

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

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Authors

Sohya KUDOH
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology

Keyword

Si surface roughness, sacrificial oxidation, TDDB

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Sohya KUDOH, Shun-ichiro OHMI, "A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics" in IEICE TRANSACTIONS on Electronics, vol. E98-C, no. 5, pp. 402-405, May 2015, doi: 10.1587/transele.E98.C.402.
Abstract: In this study, Si(100) surface flattening process was investigated utilizing sacrificial oxidation method to improve Metal–Insulator–Semiconductor (MIS) diode characteristics. By etching of the 100 nm-thick sacrificial oxide formed by thermal oxidation at 1100°C, the surface roughness of Si substrate was reduced. The obtained Root-Mean-Square (RMS) roughness was decreased from 0.15 nm (as-cleaned) to 0.07 nm in the case of sacrificial oxide formed by wet oxidation, while it was 0.10 nm in the case of dry oxidation. Furthermore, time-dependent dielectric breakdown (TDDB) characteristic of Al/SiO₂(10 nm)/p-Si(100) MIS diode structures was found to be improved by the reduction of Si surface RMS roughness.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.402/_p

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@ARTICLE{e98-c_5_402,
author={Sohya KUDOH, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics},
year={2015},
volume={E98-C},
number={5},
pages={402-405},
abstract={In this study, Si(100) surface flattening process was investigated utilizing sacrificial oxidation method to improve Metal–Insulator–Semiconductor (MIS) diode characteristics. By etching of the 100 nm-thick sacrificial oxide formed by thermal oxidation at 1100°C, the surface roughness of Si substrate was reduced. The obtained Root-Mean-Square (RMS) roughness was decreased from 0.15 nm (as-cleaned) to 0.07 nm in the case of sacrificial oxide formed by wet oxidation, while it was 0.10 nm in the case of dry oxidation. Furthermore, time-dependent dielectric breakdown (TDDB) characteristic of Al/SiO₂(10 nm)/p-Si(100) MIS diode structures was found to be improved by the reduction of Si surface RMS roughness.},
keywords={},
doi={10.1587/transele.E98.C.402},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics
T2 - IEICE TRANSACTIONS on Electronics
SP - 402
EP - 405
AU - Sohya KUDOH
AU - Shun-ichiro OHMI
PY - 2015
DO - 10.1587/transele.E98.C.402
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2015
AB - In this study, Si(100) surface flattening process was investigated utilizing sacrificial oxidation method to improve Metal–Insulator–Semiconductor (MIS) diode characteristics. By etching of the 100 nm-thick sacrificial oxide formed by thermal oxidation at 1100°C, the surface roughness of Si substrate was reduced. The obtained Root-Mean-Square (RMS) roughness was decreased from 0.15 nm (as-cleaned) to 0.07 nm in the case of sacrificial oxide formed by wet oxidation, while it was 0.10 nm in the case of dry oxidation. Furthermore, time-dependent dielectric breakdown (TDDB) characteristic of Al/SiO₂(10 nm)/p-Si(100) MIS diode structures was found to be improved by the reduction of Si surface RMS roughness.
ER -