The Study of N-type Doping and Stamping Transfer Processes of Electron Transport Layer for Organic Light-emitting Diodes

Fuh-Shyang JUANG; Apisit CHITTAWANIJ; Lin-Ann HONG; Yu-Sheng TSAI; Kuo-Kai HUANG

doi:10.1587/transele.E98.C.66

IEICE TRANSACTIONS on Electronics

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The Study of N-type Doping and Stamping Transfer Processes of Electron Transport Layer for Organic Light-emitting Diodes

Fuh-Shyang JUANG, Apisit CHITTAWANIJ, Lin-Ann HONG, Yu-Sheng TSAI, Kuo-Kai HUANG

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This paper presents 2-(hydroxyl) quinoline lithium (Liq) used as an n-type dopant to improve white hybrid organic light-emitting diode (WHOLEDs) performance. The Liq doped tris(8-hydroxyquinolinato) aluminum (Alq₃) layer possessed enhanced electron injection, efficient hole and electron balance in the emitting layer, as one of the most essential issues for device applications. This work investigates the optimum recipe (Liq concentration and thickness) of Alq₃:Liq n-type doped electron injection layer (EIL) for WHOLED devices by comparing the current density and efficiency results with conventional Alq₃/LiF technique. A blocking layer or interlayer is inserted between emitting layer and EIL to avoid excitons quenched. In this work suitable material and optimum thickness for blocking layer are studied, a white small-molecular organic light-emitting diode (SM-OLEDs) based on a 1,3,5-tris (N-phenylbenzimidazol-2-yl) benzene (TPBi) stamping transfer process is investigated. The proposed stamping transfer process can avoid the complexity of the vacuum deposition process.

Publication: IEICE TRANSACTIONS on Electronics Vol.E98-C No.2 pp.66-72

Publication Date: 2015/02/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E98.C.66

Type of Manuscript: Special Section INVITED PAPER (Special Section on Recent Progress in Organic Molecular Electronics)

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Authors

Fuh-Shyang JUANG
  National Formosa University
Apisit CHITTAWANIJ
  National Formosa University
Lin-Ann HONG
  National Formosa University
Yu-Sheng TSAI
  National Formosa University
Kuo-Kai HUANG
  National Formosa University

Keyword

OLEDs, n-type OLEDs, ETL, Solution process, Stamping process

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Fuh-Shyang JUANG, Apisit CHITTAWANIJ, Lin-Ann HONG, Yu-Sheng TSAI, Kuo-Kai HUANG, "The Study of N-type Doping and Stamping Transfer Processes of Electron Transport Layer for Organic Light-emitting Diodes" in IEICE TRANSACTIONS on Electronics, vol. E98-C, no. 2, pp. 66-72, February 2015, doi: 10.1587/transele.E98.C.66.
Abstract: This paper presents 2-(hydroxyl) quinoline lithium (Liq) used as an n-type dopant to improve white hybrid organic light-emitting diode (WHOLEDs) performance. The Liq doped tris(8-hydroxyquinolinato) aluminum (Alq₃) layer possessed enhanced electron injection, efficient hole and electron balance in the emitting layer, as one of the most essential issues for device applications. This work investigates the optimum recipe (Liq concentration and thickness) of Alq₃:Liq n-type doped electron injection layer (EIL) for WHOLED devices by comparing the current density and efficiency results with conventional Alq₃/LiF technique. A blocking layer or interlayer is inserted between emitting layer and EIL to avoid excitons quenched. In this work suitable material and optimum thickness for blocking layer are studied, a white small-molecular organic light-emitting diode (SM-OLEDs) based on a 1,3,5-tris (N-phenylbenzimidazol-2-yl) benzene (TPBi) stamping transfer process is investigated. The proposed stamping transfer process can avoid the complexity of the vacuum deposition process.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.66/_p

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@ARTICLE{e98-c_2_66,
author={Fuh-Shyang JUANG, Apisit CHITTAWANIJ, Lin-Ann HONG, Yu-Sheng TSAI, Kuo-Kai HUANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Study of N-type Doping and Stamping Transfer Processes of Electron Transport Layer for Organic Light-emitting Diodes},
year={2015},
volume={E98-C},
number={2},
pages={66-72},
abstract={This paper presents 2-(hydroxyl) quinoline lithium (Liq) used as an n-type dopant to improve white hybrid organic light-emitting diode (WHOLEDs) performance. The Liq doped tris(8-hydroxyquinolinato) aluminum (Alq₃) layer possessed enhanced electron injection, efficient hole and electron balance in the emitting layer, as one of the most essential issues for device applications. This work investigates the optimum recipe (Liq concentration and thickness) of Alq₃:Liq n-type doped electron injection layer (EIL) for WHOLED devices by comparing the current density and efficiency results with conventional Alq₃/LiF technique. A blocking layer or interlayer is inserted between emitting layer and EIL to avoid excitons quenched. In this work suitable material and optimum thickness for blocking layer are studied, a white small-molecular organic light-emitting diode (SM-OLEDs) based on a 1,3,5-tris (N-phenylbenzimidazol-2-yl) benzene (TPBi) stamping transfer process is investigated. The proposed stamping transfer process can avoid the complexity of the vacuum deposition process.},
keywords={},
doi={10.1587/transele.E98.C.66},
ISSN={1745-1353},
month={February},}

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TY - JOUR
TI - The Study of N-type Doping and Stamping Transfer Processes of Electron Transport Layer for Organic Light-emitting Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 66
EP - 72
AU - Fuh-Shyang JUANG
AU - Apisit CHITTAWANIJ
AU - Lin-Ann HONG
AU - Yu-Sheng TSAI
AU - Kuo-Kai HUANG
PY - 2015
DO - 10.1587/transele.E98.C.66
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2015
AB - This paper presents 2-(hydroxyl) quinoline lithium (Liq) used as an n-type dopant to improve white hybrid organic light-emitting diode (WHOLEDs) performance. The Liq doped tris(8-hydroxyquinolinato) aluminum (Alq₃) layer possessed enhanced electron injection, efficient hole and electron balance in the emitting layer, as one of the most essential issues for device applications. This work investigates the optimum recipe (Liq concentration and thickness) of Alq₃:Liq n-type doped electron injection layer (EIL) for WHOLED devices by comparing the current density and efficiency results with conventional Alq₃/LiF technique. A blocking layer or interlayer is inserted between emitting layer and EIL to avoid excitons quenched. In this work suitable material and optimum thickness for blocking layer are studied, a white small-molecular organic light-emitting diode (SM-OLEDs) based on a 1,3,5-tris (N-phenylbenzimidazol-2-yl) benzene (TPBi) stamping transfer process is investigated. The proposed stamping transfer process can avoid the complexity of the vacuum deposition process.
ER -

IEICE TRANSACTIONS on Electronics