A Low-Voltage Low-Power Bipolar Transconductor with High-Linearity

Won-Sup CHUNG; Hyeong-Woo CHA; Sang-Hee SON

doi:10.1093/ietfec/e88-a.1.384

A Low-Voltage Low-Power Bipolar Transconductor with High-Linearity

Won-Sup CHUNG, Hyeong-Woo CHA, Sang-Hee SON

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A new bipolar linear transconductor for low-voltage low-power signal processing is proposed. The proposed circuit has larger input linear range and smaller power dissipation when compared with the conventional bipolar linear transconductor. The experimental results show that the transconductor with a transconductance of 50 µS has a linearity error of less than 0.02% over an input voltage range of 2.1 V at supply voltages of 3 V. The power dissipation of the transconductor is 3.15 mW.

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E88-A No.1 pp.384-386

Publication Date: 2005/01/01

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DOI: 10.1093/ietfec/e88-a.1.384

Type of Manuscript: LETTER

Category: Analog Signal Processing

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Won-Sup CHUNG, Hyeong-Woo CHA, Sang-Hee SON, "A Low-Voltage Low-Power Bipolar Transconductor with High-Linearity" in IEICE TRANSACTIONS on Fundamentals, vol. E88-A, no. 1, pp. 384-386, January 2005, doi: 10.1093/ietfec/e88-a.1.384.
Abstract: A new bipolar linear transconductor for low-voltage low-power signal processing is proposed. The proposed circuit has larger input linear range and smaller power dissipation when compared with the conventional bipolar linear transconductor. The experimental results show that the transconductor with a transconductance of 50 µS has a linearity error of less than 0.02% over an input voltage range of 2.1 V at supply voltages of 3 V. The power dissipation of the transconductor is 3.15 mW.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1093/ietfec/e88-a.1.384/_p

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@ARTICLE{e88-a_1_384,
author={Won-Sup CHUNG, Hyeong-Woo CHA, Sang-Hee SON, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Low-Voltage Low-Power Bipolar Transconductor with High-Linearity},
year={2005},
volume={E88-A},
number={1},
pages={384-386},
abstract={A new bipolar linear transconductor for low-voltage low-power signal processing is proposed. The proposed circuit has larger input linear range and smaller power dissipation when compared with the conventional bipolar linear transconductor. The experimental results show that the transconductor with a transconductance of 50 µS has a linearity error of less than 0.02% over an input voltage range of 2.1 V at supply voltages of 3 V. The power dissipation of the transconductor is 3.15 mW.},
keywords={},
doi={10.1093/ietfec/e88-a.1.384},
ISSN={},
month={January},}

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TY - JOUR
TI - A Low-Voltage Low-Power Bipolar Transconductor with High-Linearity
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 384
EP - 386
AU - Won-Sup CHUNG
AU - Hyeong-Woo CHA
AU - Sang-Hee SON
PY - 2005
DO - 10.1093/ietfec/e88-a.1.384
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E88-A
IS - 1
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - January 2005
AB - A new bipolar linear transconductor for low-voltage low-power signal processing is proposed. The proposed circuit has larger input linear range and smaller power dissipation when compared with the conventional bipolar linear transconductor. The experimental results show that the transconductor with a transconductance of 50 µS has a linearity error of less than 0.02% over an input voltage range of 2.1 V at supply voltages of 3 V. The power dissipation of the transconductor is 3.15 mW.
ER -