IEICE TRANSACTIONS on Fundamentals
Automatic Extraction of Layout-Dependent Substrate Effects for RF MOSFET Modeling
Summary :
This paper presents CrtSmile--a CAD tool for the automatic extraction of layout-dependent substrate effects for RF MOSFET modeling. CrtSmile incorporates a new scalable substrate model, which depends not only on the geometric layout information of a transistor (the number of gate fingers, finger width, channel length and bulk contact location), but also on the transistor layout and bulk patterns. We show that this model is simple to extract and has good agreement with measured data for a 0.35 µm CMOS process. CrtSmile reads in the layout information of RF transistors in the CIF/GDSII format, performs a pattern-based layout extraction to recognize the transistor layout and bulk patterns. A scalable layout-dependent substrate model is automatically generated and attached to the standard BSIM3 device model as a sub-circuit for use in circuit simulation. A low noise amplifier is evaluated with the proposed CrtSmile tool, showing the importance of layout effects for RF transistor substrate modeling.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E87-A No.12 pp.3309-3317
- Publication Date
- 2004/12/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
- Category
- Device Modeling
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Zhao LI, Ravikanth SURAVARAPU, Kartikeya MAYARAM, C.-J. Richard SHI, "Automatic Extraction of Layout-Dependent Substrate Effects for RF MOSFET Modeling" in IEICE TRANSACTIONS on Fundamentals,
vol. E87-A, no. 12, pp. 3309-3317, December 2004, doi: .
Abstract: This paper presents CrtSmile--a CAD tool for the automatic extraction of layout-dependent substrate effects for RF MOSFET modeling. CrtSmile incorporates a new scalable substrate model, which depends not only on the geometric layout information of a transistor (the number of gate fingers, finger width, channel length and bulk contact location), but also on the transistor layout and bulk patterns. We show that this model is simple to extract and has good agreement with measured data for a 0.35 µm CMOS process. CrtSmile reads in the layout information of RF transistors in the CIF/GDSII format, performs a pattern-based layout extraction to recognize the transistor layout and bulk patterns. A scalable layout-dependent substrate model is automatically generated and attached to the standard BSIM3 device model as a sub-circuit for use in circuit simulation. A low noise amplifier is evaluated with the proposed CrtSmile tool, showing the importance of layout effects for RF transistor substrate modeling.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e87-a_12_3309/_p
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@ARTICLE{e87-a_12_3309,
author={Zhao LI, Ravikanth SURAVARAPU, Kartikeya MAYARAM, C.-J. Richard SHI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Automatic Extraction of Layout-Dependent Substrate Effects for RF MOSFET Modeling},
year={2004},
volume={E87-A},
number={12},
pages={3309-3317},
abstract={This paper presents CrtSmile--a CAD tool for the automatic extraction of layout-dependent substrate effects for RF MOSFET modeling. CrtSmile incorporates a new scalable substrate model, which depends not only on the geometric layout information of a transistor (the number of gate fingers, finger width, channel length and bulk contact location), but also on the transistor layout and bulk patterns. We show that this model is simple to extract and has good agreement with measured data for a 0.35 µm CMOS process. CrtSmile reads in the layout information of RF transistors in the CIF/GDSII format, performs a pattern-based layout extraction to recognize the transistor layout and bulk patterns. A scalable layout-dependent substrate model is automatically generated and attached to the standard BSIM3 device model as a sub-circuit for use in circuit simulation. A low noise amplifier is evaluated with the proposed CrtSmile tool, showing the importance of layout effects for RF transistor substrate modeling.},
keywords={},
doi={},
ISSN={},
month={December},}
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TY - JOUR
TI - Automatic Extraction of Layout-Dependent Substrate Effects for RF MOSFET Modeling
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 3309
EP - 3317
AU - Zhao LI
AU - Ravikanth SURAVARAPU
AU - Kartikeya MAYARAM
AU - C.-J. Richard SHI
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E87-A
IS - 12
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - December 2004
AB - This paper presents CrtSmile--a CAD tool for the automatic extraction of layout-dependent substrate effects for RF MOSFET modeling. CrtSmile incorporates a new scalable substrate model, which depends not only on the geometric layout information of a transistor (the number of gate fingers, finger width, channel length and bulk contact location), but also on the transistor layout and bulk patterns. We show that this model is simple to extract and has good agreement with measured data for a 0.35 µm CMOS process. CrtSmile reads in the layout information of RF transistors in the CIF/GDSII format, performs a pattern-based layout extraction to recognize the transistor layout and bulk patterns. A scalable layout-dependent substrate model is automatically generated and attached to the standard BSIM3 device model as a sub-circuit for use in circuit simulation. A low noise amplifier is evaluated with the proposed CrtSmile tool, showing the importance of layout effects for RF transistor substrate modeling.
ER -
English
