IEICE TRANSACTIONS on Fundamentals
Exploring Effect of Residual Electric Charges on Cryptographic Circuits: Extended Version
Summary :
We study a new transistor-level side-channel leakage caused by charges trapped in between stacked transistors namely residual electric charges (RECs). Building leakage models is important in designing countermeasures against side-channel attacks (SCAs). The conventional work showed that even a transistor-level leakage is measurable with a local electromagnetic measurement. One example is the current-path leak [1], [2]: an attacker can distinguish the number of transistors in the current path activated during a signal transition. Addressing this issue, Sugawara et al. proposed to use a mirror circuit that has the same number of transistors on its possible current paths. We show that this countermeasure is insufficient by showing a new transistor-level leakage, caused by RECs, not covered in the previous work. RECs can carry the history of the gate's state over multiple clock cycles and changes the gate's electrical behavior. We experimentally verify that RECs cause exploitable side-channel leakage. We also propose a countermeasure against REC leaks and designed advanced encryption standard-128 (AES-128) circuits using IO-masked dual-rail read-only memory with a 180-nm complementary metal-oxide-semiconductor (CMOS) process. We compared the resilience of our AES-128 circuits against EMA attacks with and without our countermeasure and investigated an RECs' effect on physically unclonable functions (PUFs). We further extend RECs to physically unclonable function. We demonstrate that RECs affect the performance of arbiter and ring-oscillator PUFs through experiments using our custom chips fabricated with 180- and 40-nm CMOS processes*.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E106-A No.3 pp.281-293
- Publication Date
- 2023/03/01
- Publicized
- 2022/09/15
- Online ISSN
- 1745-1337
- DOI
- 10.1587/transfun.2022CIP0009
- Type of Manuscript
- Special Section PAPER (Special Section on Cryptography and Information Security)
- Category
Authors
Mitsuru SHIOZAKI
Ritsumeikan University
Takeshi SUGAWARA
The University of Electro-Communications
Takeshi FUJINO
Ritsumeikan University
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Mitsuru SHIOZAKI, Takeshi SUGAWARA, Takeshi FUJINO, "Exploring Effect of Residual Electric Charges on Cryptographic Circuits: Extended Version" in IEICE TRANSACTIONS on Fundamentals,
vol. E106-A, no. 3, pp. 281-293, March 2023, doi: 10.1587/transfun.2022CIP0009.
Abstract: We study a new transistor-level side-channel leakage caused by charges trapped in between stacked transistors namely residual electric charges (RECs). Building leakage models is important in designing countermeasures against side-channel attacks (SCAs). The conventional work showed that even a transistor-level leakage is measurable with a local electromagnetic measurement. One example is the current-path leak [1], [2]: an attacker can distinguish the number of transistors in the current path activated during a signal transition. Addressing this issue, Sugawara et al. proposed to use a mirror circuit that has the same number of transistors on its possible current paths. We show that this countermeasure is insufficient by showing a new transistor-level leakage, caused by RECs, not covered in the previous work. RECs can carry the history of the gate's state over multiple clock cycles and changes the gate's electrical behavior. We experimentally verify that RECs cause exploitable side-channel leakage. We also propose a countermeasure against REC leaks and designed advanced encryption standard-128 (AES-128) circuits using IO-masked dual-rail read-only memory with a 180-nm complementary metal-oxide-semiconductor (CMOS) process. We compared the resilience of our AES-128 circuits against EMA attacks with and without our countermeasure and investigated an RECs' effect on physically unclonable functions (PUFs). We further extend RECs to physically unclonable function. We demonstrate that RECs affect the performance of arbiter and ring-oscillator PUFs through experiments using our custom chips fabricated with 180- and 40-nm CMOS processes*.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.2022CIP0009/_p
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@ARTICLE{e106-a_3_281,
author={Mitsuru SHIOZAKI, Takeshi SUGAWARA, Takeshi FUJINO, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Exploring Effect of Residual Electric Charges on Cryptographic Circuits: Extended Version},
year={2023},
volume={E106-A},
number={3},
pages={281-293},
abstract={We study a new transistor-level side-channel leakage caused by charges trapped in between stacked transistors namely residual electric charges (RECs). Building leakage models is important in designing countermeasures against side-channel attacks (SCAs). The conventional work showed that even a transistor-level leakage is measurable with a local electromagnetic measurement. One example is the current-path leak [1], [2]: an attacker can distinguish the number of transistors in the current path activated during a signal transition. Addressing this issue, Sugawara et al. proposed to use a mirror circuit that has the same number of transistors on its possible current paths. We show that this countermeasure is insufficient by showing a new transistor-level leakage, caused by RECs, not covered in the previous work. RECs can carry the history of the gate's state over multiple clock cycles and changes the gate's electrical behavior. We experimentally verify that RECs cause exploitable side-channel leakage. We also propose a countermeasure against REC leaks and designed advanced encryption standard-128 (AES-128) circuits using IO-masked dual-rail read-only memory with a 180-nm complementary metal-oxide-semiconductor (CMOS) process. We compared the resilience of our AES-128 circuits against EMA attacks with and without our countermeasure and investigated an RECs' effect on physically unclonable functions (PUFs). We further extend RECs to physically unclonable function. We demonstrate that RECs affect the performance of arbiter and ring-oscillator PUFs through experiments using our custom chips fabricated with 180- and 40-nm CMOS processes*.},
keywords={},
doi={10.1587/transfun.2022CIP0009},
ISSN={1745-1337},
month={March},}
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TY - JOUR
TI - Exploring Effect of Residual Electric Charges on Cryptographic Circuits: Extended Version
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 281
EP - 293
AU - Mitsuru SHIOZAKI
AU - Takeshi SUGAWARA
AU - Takeshi FUJINO
PY - 2023
DO - 10.1587/transfun.2022CIP0009
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E106-A
IS - 3
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - March 2023
AB - We study a new transistor-level side-channel leakage caused by charges trapped in between stacked transistors namely residual electric charges (RECs). Building leakage models is important in designing countermeasures against side-channel attacks (SCAs). The conventional work showed that even a transistor-level leakage is measurable with a local electromagnetic measurement. One example is the current-path leak [1], [2]: an attacker can distinguish the number of transistors in the current path activated during a signal transition. Addressing this issue, Sugawara et al. proposed to use a mirror circuit that has the same number of transistors on its possible current paths. We show that this countermeasure is insufficient by showing a new transistor-level leakage, caused by RECs, not covered in the previous work. RECs can carry the history of the gate's state over multiple clock cycles and changes the gate's electrical behavior. We experimentally verify that RECs cause exploitable side-channel leakage. We also propose a countermeasure against REC leaks and designed advanced encryption standard-128 (AES-128) circuits using IO-masked dual-rail read-only memory with a 180-nm complementary metal-oxide-semiconductor (CMOS) process. We compared the resilience of our AES-128 circuits against EMA attacks with and without our countermeasure and investigated an RECs' effect on physically unclonable functions (PUFs). We further extend RECs to physically unclonable function. We demonstrate that RECs affect the performance of arbiter and ring-oscillator PUFs through experiments using our custom chips fabricated with 180- and 40-nm CMOS processes*.
ER -
English
