IEICE TRANSACTIONS on Information
A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs Using Parallel Adaptive Technique
Summary :
In this paper we apply a parallel adaptive solution algorithm to simulate nanoscale double-gate metal-oxide-semiconductor field effect transistors (MOSFETs) on a personal computer (PC)-based Linux cluster with the message passing interface (MPI) libraries. Based on a posteriori error estimation, the triangular mesh generation, the adaptive finite volume method, the monotone iterative method, and the parallel domain decomposition algorithm, a set of two-dimensional quantum correction hydrodynamic (HD) equations is solved numerically on our constructed cluster system. This parallel adaptive simulation methodology with 1-irregular mesh was successfully developed and applied to deep-submicron semiconductor device simulation in our recent work. A 10 nm n-type double-gate MOSFET is simulated with the developed parallel adaptive simulator. In terms of physical quantities and refined adaptive mesh, simulation results demonstrate very good accuracy and computational efficiency. Benchmark results, such as load-balancing, speedup, and parallel efficiency are achieved and exhibit excellent parallel performance. On a 16 nodes PC-based Linux cluster, the maximum difference among CPUs is less than 6%. A 12.8 times speedup and 80% parallel efficiency are simultaneously attained with respect to different simulation cases.
- Publication
- IEICE TRANSACTIONS on Information Vol.E87-D No.7 pp.1751-1758
- Publication Date
- 2004/07/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Hardware/Software Support for High Performance Scientific and Engineering Computing)
- Category
- Scientific and Engineering Computing with Applications
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Yiming LI, Shao-Ming YU, "A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs Using Parallel Adaptive Technique" in IEICE TRANSACTIONS on Information,
vol. E87-D, no. 7, pp. 1751-1758, July 2004, doi: .
Abstract: In this paper we apply a parallel adaptive solution algorithm to simulate nanoscale double-gate metal-oxide-semiconductor field effect transistors (MOSFETs) on a personal computer (PC)-based Linux cluster with the message passing interface (MPI) libraries. Based on a posteriori error estimation, the triangular mesh generation, the adaptive finite volume method, the monotone iterative method, and the parallel domain decomposition algorithm, a set of two-dimensional quantum correction hydrodynamic (HD) equations is solved numerically on our constructed cluster system. This parallel adaptive simulation methodology with 1-irregular mesh was successfully developed and applied to deep-submicron semiconductor device simulation in our recent work. A 10 nm n-type double-gate MOSFET is simulated with the developed parallel adaptive simulator. In terms of physical quantities and refined adaptive mesh, simulation results demonstrate very good accuracy and computational efficiency. Benchmark results, such as load-balancing, speedup, and parallel efficiency are achieved and exhibit excellent parallel performance. On a 16 nodes PC-based Linux cluster, the maximum difference among CPUs is less than 6%. A 12.8 times speedup and 80% parallel efficiency are simultaneously attained with respect to different simulation cases.
URL: https://global.ieice.org/en_transactions/information/10.1587/e87-d_7_1751/_p
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@ARTICLE{e87-d_7_1751,
author={Yiming LI, Shao-Ming YU, },
journal={IEICE TRANSACTIONS on Information},
title={A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs Using Parallel Adaptive Technique},
year={2004},
volume={E87-D},
number={7},
pages={1751-1758},
abstract={In this paper we apply a parallel adaptive solution algorithm to simulate nanoscale double-gate metal-oxide-semiconductor field effect transistors (MOSFETs) on a personal computer (PC)-based Linux cluster with the message passing interface (MPI) libraries. Based on a posteriori error estimation, the triangular mesh generation, the adaptive finite volume method, the monotone iterative method, and the parallel domain decomposition algorithm, a set of two-dimensional quantum correction hydrodynamic (HD) equations is solved numerically on our constructed cluster system. This parallel adaptive simulation methodology with 1-irregular mesh was successfully developed and applied to deep-submicron semiconductor device simulation in our recent work. A 10 nm n-type double-gate MOSFET is simulated with the developed parallel adaptive simulator. In terms of physical quantities and refined adaptive mesh, simulation results demonstrate very good accuracy and computational efficiency. Benchmark results, such as load-balancing, speedup, and parallel efficiency are achieved and exhibit excellent parallel performance. On a 16 nodes PC-based Linux cluster, the maximum difference among CPUs is less than 6%. A 12.8 times speedup and 80% parallel efficiency are simultaneously attained with respect to different simulation cases.},
keywords={},
doi={},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs Using Parallel Adaptive Technique
T2 - IEICE TRANSACTIONS on Information
SP - 1751
EP - 1758
AU - Yiming LI
AU - Shao-Ming YU
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Information
SN -
VL - E87-D
IS - 7
JA - IEICE TRANSACTIONS on Information
Y1 - July 2004
AB - In this paper we apply a parallel adaptive solution algorithm to simulate nanoscale double-gate metal-oxide-semiconductor field effect transistors (MOSFETs) on a personal computer (PC)-based Linux cluster with the message passing interface (MPI) libraries. Based on a posteriori error estimation, the triangular mesh generation, the adaptive finite volume method, the monotone iterative method, and the parallel domain decomposition algorithm, a set of two-dimensional quantum correction hydrodynamic (HD) equations is solved numerically on our constructed cluster system. This parallel adaptive simulation methodology with 1-irregular mesh was successfully developed and applied to deep-submicron semiconductor device simulation in our recent work. A 10 nm n-type double-gate MOSFET is simulated with the developed parallel adaptive simulator. In terms of physical quantities and refined adaptive mesh, simulation results demonstrate very good accuracy and computational efficiency. Benchmark results, such as load-balancing, speedup, and parallel efficiency are achieved and exhibit excellent parallel performance. On a 16 nodes PC-based Linux cluster, the maximum difference among CPUs is less than 6%. A 12.8 times speedup and 80% parallel efficiency are simultaneously attained with respect to different simulation cases.
ER -
English
