To make a fast Bi-CMOS SRAM yield high without speed degradation, three defect-repair methods, the address comparison method, the fuse decoder method and the distributed fuse method, were considered in detail and their advantages and disadvantages were made clear. The distributed fuse method is demonstrated to be further improved by a built-in fuse word driver and a built-in fuse column selector, and fuse analog switches. This enhanced distributed fuse scheme was examined in a fast Bi-CMOS SRAM. A maximun access time of 14 ns and a chip size of 8.8 mm17.4 mm are expected for a 4 Mb Bi-CMOS SRAM in the future.